For a particular depletion mode NMOS device, Vt = -2V, kn W/L = 200 µA/V2 and λ = 0.02V-1. For VDS = 2V. What is the drain current that flows

For a particular depletion mode NMOS device, Vt = -2V, kn W/L = 200 µA/V2 and λ = 0.02V-1. For VDS = 2V. What is the value of the drain current if both L and W are doubled?

A

408 µA

B

412 µA

C

416 µA

D

420 µA

Consider the following statements regarding n-channel JFET: 1. The maximum drain current IDSS occurs when gate-to-source voltage VGS = 0 V and drain-to-source voltage VDS ≥ |VP|. (VP is pinch-off voltage). 2. For gate-to-source voltage VGS less than the pinch-off level, the drain current is 0 A. 3. For all levels of VGS between 0 V and the pinch-off level, the current ID will range between IDSS and 0 A, respectively. which of the above statements are correct ?

A

1 and 2 only

B

1 and 3 only

C

1, 2 and 3

D

2 and 3 only

When the voltage across the drain and the source (VDS) is increased from a small amount (assuming that the gate voltage, VG with respect to the source is higher than the threshold voltage, Vt), then the width of the induced channel in NMOS (assume that VDS is always small when compared to the Vov)

A

Will remain as was before

B

Will become non uniform and will take a tapered shape with deepest width at the drain

C

Will become non uniform and will take a tapered shape with deepest width at the source

D

Will remain uniform but the width of the channel will increase

When VDS is the drain voltage and VDS(max) is the maximum drain voltage, the JFET will breakdown if:

A

V_DS < V_DS(max)

B

V_DS = V_DS(max)

C

V_DS > V_DS(max)

D

V_DS = 0.25 V_DS(max)

Which of the following statement/s about MOSFET is correct? (I) In the P-type device current flows due to electrons. (II) In depletion type of MOSFET channel is already present. (III) Pinch-off occurs at VDS < VGS − VTH

A

Only (I)

B

Only (II)

C

Only (III)

D

Only (I) & (II)

An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results?

A

0.25ID

B

0.5ID

C

2ID

D

4ID

For a fixed bias circuit the drain current was 1mA, VDD=12V, determine drain resistance required if VDS=10V?

A

1KΩ

B

1.5KΩ

C

2KΩ

D

4KΩ

Consider the following statements regarding Thyristor: 1. It conducts when forward biased and positive current flows through the gate 2. It conducts when forward biased and negative current flows through the gate 3. It commutates when reverse biased and negative current flows through the gate 4. It commutates when the gate current is withdrawn Which of these statement(s) is/are correct?

A

1, 2 and 3

B

1 and 2 only

C

2 and 3 only

D

1 only

For a p-channel FET, the current ID at Vgs = 2V and Vds = 5V and Vgs = 3V was found to be 2mA, what will be the value of ID at Vgs = 0V and Vds = 5V?

A

0A

B

2mA

C

Lesser than 0A

D

Greater than 2mA

For an n-channel FET, the current v at Vgs=-2V and Vds=5V was found to be 2mA, what will be the value of ID at Vgs=0V and Vds=5V?

A

0A

B

2mA

C

Lesser than 0A

D

Greater than 2mA

For a particular depletion mode NMOS device, Vt = -2V, kn W/L = 200 µA/V2 and λ = 0.02V-1. For VDS = 2V. What is the drain current that flows

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