Electronic Devices and Circuits MCQ

Test your knowledge with important Electronic Devices and Circuits MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Electronic Devices and Circuits MCQs at Bissoy

• When diodes are connected in series to increase voltage rating the peak inverse voltage per junction
  ক

  should not exceed half the breakdown voltage

  খ

  should not exceed the breakdown voltage

  গ

  should not exceed one third the breakdown voltage

  ঘ

  may be equal to or less than breakdown voltage
• In monolithic ICs, all the components are fabricated by
  ক

  Diffusion process

  খ

  Oxidation

  গ

  Evaporation

  ঘ

  None
• Fermi level is the amount of energy in which
  ক

  A hole can have at room temperature

  খ

  An electron can have at room temperature

  গ

  Must be given to an electron move to conduction band

  ঘ

  None of the above
• Hall effect is observed in a specimen when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is
  ক

  Normal to both current and magnetic field

  খ

  In the direction of current

  গ

  Antiparallel to magnetic field

  ঘ

  In arbitrary direction
• In which of these is reverse recovery time nearly zero?
  ক

  Zener diode

  খ

  Tunnel diode

  গ

  Schottky diode

  ঘ

  PIN diode
• Which one of the following is not a characteristic of a ferroelectric material?
  ক

  High dielectric constant

  খ

  No hysteresis

  গ

  Ferroelectric characteristic only above the curie point

  ঘ

  Electric dipole moment
• Permalloy is
  ক

  A variety of stainless steel

  খ

  A polymer

  গ

  A conon-ferrous alloy used in aircraft industry

  ঘ

  A nickel an iron alloy having high permeability
• The most commonly used semiconductor material is
  ক

  Silicon

  খ

  Germanium

  গ

  Mixture of silicon and germanium

  ঘ

  None of the above
• As compared to bipolar junction transistor, a FET
  ক

  Is less noisy

  খ

  Has better thermal stability

  গ

  Has higher input resistance

  ঘ

  All of the above
• In a semiconductor diode, the barrier offers opposition to
  ক

  Holes in P-region only

  খ

  Free electrons in N-region only

  গ

  Majority carriers in both regions

  ঘ

  Majority as well as minority carriers in both regions
• Assertion (A): A VMOS can handle much larger current than other field effect transistors.<br>Reason (R): In a VMOS the conducting channel is very narrow.
  ক

  Both A and R are true and R is correct explanation of A

  খ

  Both A and R are true but R is not a correct explanation of A

  গ

  A is true but R is false

  ঘ

  A is false but R is true
• Forbidden energy gap in germanium at 0 K is about
  ক

  10 eV

  খ

  5 eV

  গ

  2 eV

  ঘ

  0.78 eV
• In the sale of diamonds the unit of weight is carat. One carat is equal to
  ক

  100 mg

  খ

  150 mg

  গ

  200 mg

  ঘ

  500 mg
• Piezoelectric quartz crystal resonators find application where
  ক

  Signal amplification is required

  খ

  Rectification of the signal is required

  গ

  Signal frequency control is required

  ঘ

  Modulation of signal is required
• Which of the following could be the maximum current rating of junction diode by 126?
  ক

  1 A

  খ

  10 A

  গ

  20 A

  ঘ

  100 A
• The sensitivity of human eyes is maximum at
  ক

  White portion of spectrum

  খ

  Green portion of spectrum

  গ

  Red portion of spectrum

  ঘ

  Violet portion of spectrum
• The amount of photoelectric emission current depends on
  ক

  Frequency of incident radiation

  খ

  Intensity of incident radiation

  গ

  Both frequency and intensity of incident radiation

  ঘ

  None of the above
• The output, V-I characteristics of an Enhancement type MOSFET has
  ক

  Only an ohmic region

  খ

  Only a saturation region

  গ

  An ohmic region at low voltage value followed by a saturation region at higher voltages

  ঘ

  An ohmic region at large voltage values preceded by a saturation region at lower voltages
• Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
  ক

  True

  খ

  False
• In a bipolar transistor, the base collector junction has
  ক

  Forward bias

  খ

  Reverse bias

  গ

  Zero bias

  ঘ

  Zero or forward bias
• Assertion (A): A p-n junction has high resistance in reverse direction.<br>Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
  ক

  Both A and R are true and R is correct explanation of A

  খ

  Both A and R are true but R is not a correct explanation of A

  গ

  A is true but R is false

  ঘ

  A is false but R is true
• A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
  ক

  100

  খ

  99

  গ

  1.01

  ঘ

  0.99
• At room temperature the current in an intrinsic semiconductor is due to
  ক

  Holes

  খ

  Electrons

  গ

  Ions

  ঘ

  Holes and electrons
• Which of the following has highest resistivity?
  ক

  Mica

  খ

  Paraffin wax

  গ

  Air

  ঘ

  Mineral oil
• If too large current passes through the diode
  ক

  All electrons will leave

  খ

  All holes will freeze

  গ

  Excessive heat may damage the diode

  ঘ

  Diode will emit light
• An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased
  ক

  The number of free electrons increases

  খ

  The number of free electrons increases but the number of holes decreases

  গ

  The number of free electrons and holes increase by the same amount

  ঘ

  The number of free electrons and holes increase but not by the same amount
• The depletion layer width of Junction
  ক

  Decreases with light doping

  খ

  Is independent of applied voltage

  গ

  Is increased under reverse bias

  ঘ

  Increases with heavy doping
• In a bipolar transistor, the emitter base junction has
  ক

  Forward bias

  খ

  Reverse bias

  গ

  Zero bias

  ঘ

  Zero or reverse bias
• Light dependent resistors are
  ক

  Highly doped semiconductor

  খ

  Intrinsic semiconductor

  গ

  Lightly doped semiconductor

  ঘ

  Either A or B
• How many free electrons does a p type semiconductor has?
  ক

  Only those produced by thermal energy

  খ

  Only those produced by doping

  গ

  Those produced by doping as well as thermal energy

  ঘ

  Any of the above