Related Questions

In a bipolar transistor, the base collector junction has
A Forward bias
B Reverse bias
C Zero bias
D Zero or forward bias
The early effect in a bipolar junction transistor is caused by
A Fast turn-on
B Fast turn-off
C Large collector-base reverse bias
D Large emitter-base forward bias
As compared to bipolar junction transistor, a FET
A Is less noisy
B Has better thermal stability
C Has higher input resistance
D All of the above
The two basic technologies for digital ICs are bipolar and MOS. Bipolar technology is preferred for_____ and _____ whereas MOS technology is better suited to LSI.
A SSI, MSI
B MSI, LSI
C SSI, LSI
D ECL, DTL
E None of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A Drift of holes
B Diffusion of holes
C Drift of electrons
D Diffusion of electrons
As the temperature of a transistor goes up, the base emitter resistance ___________
A decreases
B increases
C remains the same
D none of the above
In a transistor, the base current is about ___________ of emitter current
A 25%
B 20%
C 35%
D 5%
At the base emitter junctions of a transistor, one finds ___________
A a reverse bias
B a wide depletion layer
C low resistance
D none of the above
কমন গ্রামিটার বর্তনীতে একটি n-p-n ট্রানজিস্টরের সংগ্রাহকে 8 V ব্যাটারী সংযুক্ত আছে। সংগ্রাহক Rt রোধের দুই প্রান্তে বিভব পতন 0.5 V হলে বেস কারেন্ট নির্ণয় কর। [দেওয়া আছে Rt = 800 Ω এবং বর্তনীর α =0.96)(An n-p-n transistor is connected in common emitter configuration in which the collector supply is 8 V. Determine the base current, if the voltage drops across the resistance Re of the collector circuit is 0.5 V. [Rt = 800Ω and α = 0.96])
A 0.625 mA
B 0.000625 mA
C 0.974 mA
D 0.026 mA
E 0.000026 mA
The collector-base junction in a transistor has ___________
A forward bias at all times
B reverse bias at all times
C low resistance
D none of the above

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