In a bipolar transistor, the emitter base junction has

In a bipolar transistor, the base collector junction has

A

Forward bias

B

Reverse bias

C

Zero bias

D

Zero or forward bias

The early effect in a bipolar junction transistor is caused by

A

Fast turn-on

B

Fast turn-off

C

Large collector-base reverse bias

D

Large emitter-base forward bias

As compared to bipolar junction transistor, a FET

A

Is less noisy

B

Has better thermal stability

C

Has higher input resistance

D

All of the above

The two basic technologies for digital ICs are bipolar and MOS. Bipolar technology is preferred for_____ and _____ whereas MOS technology is better suited to LSI.

A

SSI, MSI

B

MSI, LSI

C

SSI, LSI

D

ECL, DTL

E

None of the above

For a NPN bipolar transistor, what is the main stream of current in the base region?

A

Drift of holes

B

Diffusion of holes

C

Drift of electrons

D

Diffusion of electrons

As the temperature of a transistor goes up, the base emitter resistance ___________

A

decreases

B

increases

C

remains the same

D

none of the above

In a transistor, the base current is about ___________ of emitter current

A

25%

B

20%

C

35%

D

5%

At the base emitter junctions of a transistor, one finds ___________

A

a reverse bias

B

a wide depletion layer

C

low resistance

D

none of the above

কমন গ্রামিটার বর্তনীতে একটি n-p-n ট্রানজিস্টরের সংগ্রাহকে 8 V ব্যাটারী সংযুক্ত আছে। সংগ্রাহক Rt রোধের দুই প্রান্তে বিভব পতন 0.5 V হলে বেস কারেন্ট নির্ণয় কর। [দেওয়া আছে Rt = 800 Ω এবং বর্তনীর α =0.96)(An n-p-n transistor is connected in common emitter configuration in which the collector supply is 8 V. Determine the base current, if the voltage drops across the resistance Re of the collector circuit is 0.5 V. [Rt = 800Ω and α = 0.96])

A

0.625 mA

B

0.000625 mA

C

0.974 mA

D

0.026 mA

E

0.000026 mA

The collector-base junction in a transistor has ___________

A

forward bias at all times

B

reverse bias at all times

C

low resistance

D

none of the above

In a bipolar transistor, the emitter base junction has

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