Related Questions

The early effect in a bipolar junction transistor is caused by
A Fast turn-on
B Fast turn-off
C Large collector-base reverse bias
D Large emitter-base forward bias
In a bipolar transistor, the emitter base junction has
A Forward bias
B Reverse bias
C Zero bias
D Zero or reverse bias
In a bipolar transistor, the base collector junction has
A Forward bias
B Reverse bias
C Zero bias
D Zero or forward bias
"FET" is a type of transistor, Its full name is ________ Effect Transistor?
A Field
B Factor
C Flash
D Force
Thermal runaway is not possible in FET because as the temperature of FET increases
A The mobility decreases
B The transconductance increases
C The drain current increases
D None of the above
The two basic technologies for digital ICs are bipolar and MOS. Bipolar technology is preferred for_____ and _____ whereas MOS technology is better suited to LSI.
A SSI, MSI
B MSI, LSI
C SSI, LSI
D ECL, DTL
E None of the above
If a FET is used as the first AF amplifier in a transistor receiver, this will have the effect of
A Improving the effectiveness of the AGC
B Reducing the effect of negative-peak clipping
C Reducing the effect of noise at low modulation depths
D Improving the selectivity of the receiver
For a NPN bipolar transistor, what is the main stream of current in the base region?
A Drift of holes
B Diffusion of holes
C Drift of electrons
D Diffusion of electrons
The current gain of a bipolar transistor drops at high frequencies because of
A Transistor capacitances
B High current effects in the base
C Parasitic inductive elements
D The early effect
What is the main advantage of using MOSFET rather than bipolar transistor circuitary in ICs?
A much greater complexity (more components) than bipolar circuits : better economy
B higher operating speed than bipolar circuits
C fewer power supply connections are required with MOS ICs
D system designers are more familiar with MOS circuitary
E None of the above

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