What is the main advantage of using MOSFET rather than bipolar transistor circuitary in ICs?

The Transfer characteristic of the different types of MOSFETs is shown below, where ID is drain current and VGS is the Gate-Source voltage, the correct combination of MOSFET w.r.t to transfer characteristics is: Types of MOSFET (P) P – Channel Enhancement MOSFET (Q) P – Channel Depletion MOSFET (R) N – Channel Enhancement MOSFET (S) N – Channel Depletion MOSFET

A

P – 4, Q – 2, R – 1, S – 3

B

P – 3, Q – 2, R – 4, S – 1

C

P – 1, Q – 3, R – 2, S – 4

D

P – 2, Q – 4, R – 3, S - 1

Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT

A

Both i & ii

B

Both ii & iv

C

Both i & iv

D

Only ii

What advantages do ICs have over discrete-device circuits due to their greater complexity (i.e. more circuitary in less area)

A

Smaller size

B

Higher reliability

C

Lower cost

D

All of the above

E

None of the above

The two basic technologies for digital ICs are bipolar and MOS. Bipolar technology is preferred for_____ and _____ whereas MOS technology is better suited to LSI.

A

SSI, MSI

B

MSI, LSI

C

SSI, LSI

D

ECL, DTL

E

None of the above

Which of the following statements are correct? (a) CMOS has a higher speed and smaller power than BJT. (b) CMOS ICs inputs should never be left unconnected as it may damage the device. (c) CMOS ICs with Schmitt trigger inputs are useful for better noise immunity. (d) CMOS is most popular logic family in VLSI Technology.

A

(a), (c) and (d) are correct

B

(b), (c) and (d) are correct

C

(a), (b) and (c) are correct

D

(a), (b) and (d) are correct

The following item consists of two statements, one labeled as the 'Statement (I)' and the other as 'Statement (II)'. Examine these two statements carefully and select the answers to these items using the codes given below: Statement (I): MOSFET is a field-effect transistor whose drain current is controlled by the voltage applied at the gate. Statement (II): MOSFET is an insulated gate FET. Codes:

A

Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)

B

Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)

C

Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

D

Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

E

Statement (I) is true but Statement (II) is false

F

Statement (I) is true but Statement (II) is false

G

Statement (I) is false but Statement (II) is true

H

Statement (I) is false but Statement (II) is true

Which of the following are the characteristics of a Junction Field Effect Transistor? 1. High input resistance 2. Good thermal stability 3. High current gain 4. Noisier than bipolar junction transistor

A

1 and 3

B

1 and 2

C

2 and 3

D

3 and 4

L is older than M and taller than N. O is younger than P, older than N and shorter than Q. R is older than S, younger than N, shorter than S and taller than Q. S is older than L, M, O, P, Q, R and S is necessarily false?

A

O is the shortest of the group.

B

N is the second tallest of the group.

C

L is the tallest of the group.

D

Q is the third oldest of the group.

Study the given information and answer the question that follows. i) Six students P, Q, R, S, T, and U are in a class. ii) Q and R are lighter than U but taller than P. iii) S is taller than Q and heavier than R. iv) T is lighter than S but heavier than U. v) U is taller than S. vi) P is lighter than T but heavier than U. vii) P is taller than T. Who among the students is the shortest?

A

T

B

R

C

Q

D

P

Under normal operating conditions, the gate terminals of an n-channel Junction Field Effect Transistor UFET) and an n-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are

A

both biased with positive potentials

B

both biased with negative potentials

C

biased with positive and negative potentials respectively

D

biased with negative and positive potentials respectively

What is the main advantage of using MOSFET rather than bipolar transistor circuitary in ICs?

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