An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results?

Consider an NMOS transistor having kn= 2 mA/V2. Let the transistor be biased at VOV = 1V. For operation in saturation, what dc bias current ID results? If a +0.1-V signal is superimposed on VGS, find the corresponding increment in collector current by evaluating the total collector current ID and subtracting the dc bias current ID.

A

ID = 1mA and Increment = 0.21 mA

B

ID = 1mA and Increment = 0.42 mA

C

ID = 2mA and Increment = 0.21 mA

D

ID = 2mA and Increment = 0.42 mA

Determine the conditions in which the MOSFET is operating in the saturation region. i. VGD > Vt (Threshold voltage) ii. VDS > VOV iii. ID ∝ (VOV)2

A

i, ii, and iii are correct

B

i and iii are correct

C

i and ii are correct

D

ii and iii are correct

Various measurements are made on an NMOS amplifier for which the drain resistor RD is 20 kΩ. First, DC measurements show the voltage across the drain resistor, VRD, to be 2 V and the gate-to-source bias voltage to be 1.2 V. Then, ac measurements with small signals show the voltage gain to be −10 V/V. What is the value of Vt for this transistor?

A

0.7V

B

0.8V

C

0.9V

D

1.0V

When the voltage across the drain and the source (VDS) is increased from a small amount (assuming that the gate voltage, VG with respect to the source is higher than the threshold voltage, Vt), then the width of the induced channel in NMOS (assume that VDS is always small when compared to the Vov)

A

Will remain as was before

B

Will become non uniform and will take a tapered shape with deepest width at the drain

C

Will become non uniform and will take a tapered shape with deepest width at the source

D

Will remain uniform but the width of the channel will increase

Consider the following statements regarding n-channel JFET: 1. The maximum drain current IDSS occurs when gate-to-source voltage VGS = 0 V and drain-to-source voltage VDS ≥ |VP|. (VP is pinch-off voltage). 2. For gate-to-source voltage VGS less than the pinch-off level, the drain current is 0 A. 3. For all levels of VGS between 0 V and the pinch-off level, the current ID will range between IDSS and 0 A, respectively. which of the above statements are correct ?

A

1 and 2 only

B

1 and 3 only

C

1, 2 and 3

D

2 and 3 only

Determine the conditions in which the MOSFET is operating in the triode region from the following figure. i. VGD > Vt (Threshold voltage) ii. VDS > VOV iii. ID ∝ (VOV – 0.5VDS)VDS

A

i, ii, and iii are correct

B

i and iii are correct

C

i and ii are correct

D

ii and iii are correct

Various measurements are made on an NMOS amplifier for which the drain resistor RD is 20 kΩ. First, DC measurements show the voltage across the drain resistor, VRD, to be 2 V and the gate-to-source bias voltage to be 1.2 V. Then, ac measurements with small signals show the voltage gain to be −10 V/V. If the process transconductance parameter is 50μA/V2, what is the MOSFET’s W/L?

A

25

B

50

C

75

D

100

Consider the amplifier below for the case VDD = 5 V, RD = 24 kΩ, (W/L) = 1 mA/V2, and Vt = 1 V. For amplifier biased to operate with an overdrive voltage of 0.5V, and disregarding the distortion caused by the MOSFET’s square-law characteristic, what is the largest amplitude of a sine-wave voltage signal that can be applied at the input while the transistor remains in saturation?

A

1.61 V

B

1.5 V

C

0.11 V

D

3.11 V

When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage

A

decreases

B

increases

C

remains constant

D

none of the above

Which of the following regions of operation are mainly responsible for heating of the transistor under switching operation? 1. Saturation region 2. Cut-off region 3. Transition from saturation to cut-off 4. Transition from cut-off to saturation

A

1, 2, and 4 only

B

1, 3, and 4 only

C

2 and 3 only

D

1 and 3 only

An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results?

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