Consider the amplifier below for the case VDD = 5 V, RD = 24 kΩ, (W/L) = 1 mA/V2, and Vt = 1 V. For amplifier biased to operate with an overdrive voltage of 0.5V, and disregarding the distortion caused by the MOSFET’s square-law characteristic, what is the largest amplitude of a sine-wave voltage signal that can be applied at the input while the transistor remains in saturation?

Consider the amplifier below for the case VDD = 5 V, RD = 24 kΩ, (W/L) = 1 mA/V2, and Vt = 1 V. If the amplifier is biased to operate with an overdrive voltage VOV of 0.5 V, find the incremental gain at the bias point.

A

-3 V/V

B

-6 V/V

C

-9 V/V

D

-12 V/V

The Transfer characteristic of the different types of MOSFETs is shown below, where ID is drain current and VGS is the Gate-Source voltage, the correct combination of MOSFET w.r.t to transfer characteristics is: Types of MOSFET (P) P – Channel Enhancement MOSFET (Q) P – Channel Depletion MOSFET (R) N – Channel Enhancement MOSFET (S) N – Channel Depletion MOSFET

A

P – 4, Q – 2, R – 1, S – 3

B

P – 3, Q – 2, R – 4, S – 1

C

P – 1, Q – 3, R – 2, S – 4

D

P – 2, Q – 4, R – 3, S - 1

A transistor is used in common emitter mode as an amplifier. Then a. The base-emitter junction is forward biased b. The base-emitter junction is reverse biased c. The input signal is connected in series with the voltage applied to the base-emitter junction d. The input signal is connected in series with the voltage applied to bias the base-collector junction Which of the following statement is true?

A

Only a

B

Both b and c

C

a, b and d

D

a and c

Consider an inverting amplifier with a nominal gain of 1000 constructed from an op amp with an input offset voltage of 3 mV and with output saturation levels of ±10 V. If the effect of VOs(input offset voltage) is nulled at room temperature (250C), how large an input can one now apply if the circuit is to operate at a constant temperature?

A

8.5 mV

B

9 mV

C

9.5 mV

D

10 mV

In the below input output characteristic of MOSFET amplifier, if Vin > Vin1, the MOSFET is said to operate in:

A

Saturation region

B

Cutoff region

C

Triode region

D

None of the mentioned

An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results?

A

0.25ID

B

0.5ID

C

2ID

D

4ID

In NPN transistor, when emitter junction is forward biased and collector junction is reverse biased, the transistor will operate in

A

Active region

B

Cut off region

C

Saturation region

D

Inverted region

In which of the below-mentioned logic families, the transistors operate between cut-off and active (non-saturation) states? (i) Transistor-Transistor Logic (TTL) (ii) Schottky TTL (iii) Diode Transistor Logic (DTL) (iv) Emitter Coupled Logic (ECL) Choose the correct answer from the code given below: Code:

A

(i) and (iii) are correct

B

(ii) and (iii) are correct

C

(i) and (iv) are correct

D

(ii) and (iv) are correct

Consider an NMOS transistor having kn= 2 mA/V2. Let the transistor be biased at VOV = 1V. For operation in saturation, what dc bias current ID results? If a +0.1-V signal is superimposed on VGS, find the corresponding increment in collector current by evaluating the total collector current ID and subtracting the dc bias current ID.

A

ID = 1mA and Increment = 0.21 mA

B

ID = 1mA and Increment = 0.42 mA

C

ID = 2mA and Increment = 0.21 mA

D

ID = 2mA and Increment = 0.42 mA

Consider an inverting amplifier with a nominal gain of 1000 constructed from an op amp with an input offset voltage of 3 mV and with output saturation levels of ±10 V. What is (approximately) the peak sine-wave input signal that can be applied without output clipping?

A

7 mV

B

10 mV

C

13 mV

D

9mV

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