MOSFET in Amplfier Design MCQ

Test your knowledge with important MOSFET in Amplfier Design MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more MOSFET in Amplfier Design MCQs at Bissoy

• Consider the amplifier circuit shown below. The transistor is specified to have Vt = 0.4 V, kn = 0.4 mA/V2, W/L = 10 and λ = 0. Also, let VDD = 1.8V, RD = 17.5kΩ, VGS = 0.6V and vgs = 0V. Find VDS.
  ক

  0.1V

  খ

  0.2 V

  গ

  0.4 V

  ঘ

  0.8 V
• Consider the amplifier circuit shown below. The transistor is specified to have Vt = 0.4 V, kn = 0.4 mA/V2, W/L = 10 and λ = 0. Also, let VDD = 1.8V, RD = 17.5kΩ, VGS = 0.6V and vgs = 0V. Find ID.
  ক

  0.08 mA

  খ

  0.16 mA

  গ

  0.4 mA

  ঘ

  0.8 mA
• Bias point is also referred by the name
  ক

  DC Operating Point

  খ

  Quiescent Point

  গ

  None of the mentioned

  ঘ

  All of the mentioned
• Which of the following is the fastest switching device?
  ক

  JEFT

  খ

  Triode

  গ

  MOSFET

  ঘ

  BJT
• Consider the amplifier below for the case VDD = 5 V, RD = 24 kΩ, (W/L) = 1 mA/V2, and Vt = 1 V. For the input signal of 1.5V what is the value of the gain value obtained?
  ক

  -12.24 V/V

  খ

  -12.44 V/V

  গ

  -12.64 V/V

  ঘ

  -12.84 V/V
• Consider the amplifier below for the case VDD = 5 V, RD = 24 kΩ, (W/L) = 1 mA/V2, and Vt = 1 V. For amplifier biased to operate with an overdrive voltage of 0.5V, and disregarding the distortion caused by the MOSFET’s square-law characteristic, what is the largest amplitude of a sine-wave voltage signal that can be applied at the input while the transistor remains in saturation?
  ক

  1.61 V

  খ

  1.5 V

  গ

  0.11 V

  ঘ

  3.11 V
• Consider the amplifier below for the case VDD = 5 V, RD = 24 kΩ, (W/L) = 1 mA/V2, and Vt = 1 V. If the amplifier is biased to operate with an overdrive voltage VOV of 0.5 V, find the incremental gain at the bias point.
  ক

  -3 V/V

  খ

  -6 V/V

  গ

  -9 V/V

  ঘ

  -12 V/V
• Various measurements are made on an NMOS amplifier for which the drain resistor RD is 20 kΩ. First, DC measurements show the voltage across the drain resistor, VRD, to be 2 V and the gate-to-source bias voltage to be 1.2 V. Then, ac measurements with small signals show the voltage gain to be −10 V/V. If the process transconductance parameter is 50μA/V2, what is the MOSFET’s W/L?
  ক

  25

  খ

  50

  গ

  75

  ঘ

  100
• Various measurements are made on an NMOS amplifier for which the drain resistor RD is 20 kΩ. First, DC measurements show the voltage across the drain resistor, VRD, to be 2 V and the gate-to-source bias voltage to be 1.2 V. Then, ac measurements with small signals show the voltage gain to be −10 V/V. What is the value of Vt for this transistor?
  ক

  0.7V

  খ

  0.8V

  গ

  0.9V

  ঘ

  1.0V