Determine the conditions in which the MOSFET is operating in the triode region from the following figure. i. VGD > Vt (Threshold voltage) ii. VDS > VOV iii. ID ∝ (VOV

Determine the conditions in which the MOSFET is operating in the saturation region. i. VGD > Vt (Threshold voltage) ii. VDS > VOV iii. ID ∝ (VOV)2

A

i, ii, and iii are correct

B

i and iii are correct

C

i and ii are correct

D

ii and iii are correct

When the voltage across the drain and the source (VDS) is increased from a small amount (assuming that the gate voltage, VG with respect to the source is higher than the threshold voltage, Vt), then the width of the induced channel in NMOS (assume that VDS is always small when compared to the Vov)

A

Will remain as was before

B

Will become non uniform and will take a tapered shape with deepest width at the drain

C

Will become non uniform and will take a tapered shape with deepest width at the source

D

Will remain uniform but the width of the channel will increase

The Transfer characteristic of the different types of MOSFETs is shown below, where ID is drain current and VGS is the Gate-Source voltage, the correct combination of MOSFET w.r.t to transfer characteristics is: Types of MOSFET (P) P – Channel Enhancement MOSFET (Q) P – Channel Depletion MOSFET (R) N – Channel Enhancement MOSFET (S) N – Channel Depletion MOSFET

A

P – 4, Q – 2, R – 1, S – 3

B

P – 3, Q – 2, R – 4, S – 1

C

P – 1, Q – 3, R – 2, S – 4

D

P – 2, Q – 4, R – 3, S - 1

In a power MOSFET, pinch-off occurs when (VDS is the drain to source voltage, VGS is the gate to source voltage VT is the threshold voltage):

A

V_DS= V_GS - V_T

B

V_DS≤ V_GS - V_T

C

V_GS ≤ V_T

D

V_DS ≥ V_GS-V_T

An n-channel MOSFET operating with VOV=0.5V exhibits a linear resistance = 1 kΩ when VDS is very small. What is the value of the device transconductance parameter kn?

A

2 mA/V2

B

20 mA/V2

C

0.2 A/V2

D

2 A/V2

An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results?

A

0.25ID

B

0.5ID

C

2ID

D

4ID

Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT

A

Both i & ii

B

Both ii & iv

C

Both i & iv

D

Only ii

Determine the least voltage VDS required to operate E-MOSFET on active region. (Vgs=2V,Vt=0.7V)

A

1.2V

B

2V

C

0V

D

1.3V

When VDS is the drain voltage and VDS(max) is the maximum drain voltage, the JFET will breakdown if:

A

V_DS < V_DS(max)

B

V_DS = V_DS(max)

C

V_DS > V_DS(max)

D

V_DS = 0.25 V_DS(max)

Which of the following statement/s about MOSFET is correct? (I) In the P-type device current flows due to electrons. (II) In depletion type of MOSFET channel is already present. (III) Pinch-off occurs at VDS < VGS − VTH

A

Only (I)

B

Only (II)

C

Only (III)

D

Only (I) & (II)

Determine the conditions in which the MOSFET is operating in the triode region from the following figure. i. VGD > Vt (Threshold voltage) ii. VDS > VOV iii. ID ∝ (VOV – 0.5VDS)VDS

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