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Which of the following statement/s about MOSFET is correct? (I) In the P-type device current flows due to electrons. (II) In depletion type of MOSFET channel is already present. (III) Pinch-off occurs at VDS < VGS − VTH

Which of the following statement/s about MOSFET is correct? (I) In the P-type device current flows due to electrons. (II) In depletion type of MOSFET channel is already present. (III) Pinch-off occurs at VDS < VGS − VTH Correct Answer Only (II)

  • P-Channel MOSFET is a classification of Metal Oxide Semiconductor Device.
  • This consists of the n-substrate in the middle with a light doping concentration.
  • It possesses uni-polar characteristics because its operation is dependent on the majority of the charge carriers.
  • In this, the majority of the carriers are holes because of two p materials utilized in the circuitry. (Statement 1 is incorrect)
  • In any depletion type MOSFET, whether it is an n channel or p channel, the channel is already present and built. (Statement 2 is correct)
  • Depletion mode MOSFET is always in ON condition without applications of gate voltage.
  • After applying the voltage difference between the source and drain current starts flowing through MOSFET.
  • Pinch-off occurs in MOSFET if VGS < VT (Statement 3 is incorrect)

Related Questions

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