A depletion type N channel MOSFEt with knW/L = 2 mA/V2 and Vt = 3V has its source and gate grounded. For Vd = 0.1V and neglecting channel length modulating effect. Find drain current.

The Transfer characteristic of the different types of MOSFETs is shown below, where ID is drain current and VGS is the Gate-Source voltage, the correct combination of MOSFET w.r.t to transfer characteristics is: Types of MOSFET (P) P – Channel Enhancement MOSFET (Q) P – Channel Depletion MOSFET (R) N – Channel Enhancement MOSFET (S) N – Channel Depletion MOSFET

A

P – 4, Q – 2, R – 1, S – 3

B

P – 3, Q – 2, R – 4, S – 1

C

P – 1, Q – 3, R – 2, S – 4

D

P – 2, Q – 4, R – 3, S - 1

A depletion type N channel MOSFEt with knW/L = 2 mA/V2 and Vt = 3V has its source and gate grounded. For Vd = 0.1V and neglecting channel length modulating effect. In which region is the triode operating?

A

Triode region

B

End of saturation region

C

Saturation region

D

None of the mentioned

Consider the following statements regarding n-channel JFET: 1. The maximum drain current IDSS occurs when gate-to-source voltage VGS = 0 V and drain-to-source voltage VDS ≥ |VP|. (VP is pinch-off voltage). 2. For gate-to-source voltage VGS less than the pinch-off level, the drain current is 0 A. 3. For all levels of VGS between 0 V and the pinch-off level, the current ID will range between IDSS and 0 A, respectively. which of the above statements are correct ?

A

1 and 2 only

B

1 and 3 only

C

1, 2 and 3

D

2 and 3 only

Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT

A

Both i & ii

B

Both ii & iv

C

Both i & iv

D

Only ii

The MOSFET circuit below has Vt = 1V, knW/L = 0.8 mA/V2 and VA = 40V. If terminal X is grounded and terminal Z is connected to a current source delivering a current of 10 µA and having a resistance of 100 kΩ, find the voltage signal that can be measured at Y neglecting the effect of V0.

A

0.34V

B

0.68 V

C

3.4 V

D

6.8 V

The following item consists of two statements, one labeled as the 'Statement (I)' and the other as 'Statement (II)'. Examine these two statements carefully and select the answers to these items using the codes given below: Statement (I): MOSFET is a field-effect transistor whose drain current is controlled by the voltage applied at the gate. Statement (II): MOSFET is an insulated gate FET. Codes:

A

Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)

B

Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)

C

Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

D

Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

E

Statement (I) is true but Statement (II) is false

F

Statement (I) is true but Statement (II) is false

G

Statement (I) is false but Statement (II) is true

H

Statement (I) is false but Statement (II) is true

Which type of channel is formed, between P-type source, N-type substrate and P-type drain terminal, when a positive voltage is applied on the gate terminal of an enhancement type MOSFET?

A

P-channel

B

N-channel

C

No channel

D

Half N channel half P channel

When a negative voltage is applied on the gate terminal, a N channel is formed between N-type source, P-type substrate and N-type drain terminal of an enhancement type MOSFET.

A

True

B

False

Which of the following statement/s about MOSFET is correct? (I) In the P-type device current flows due to electrons. (II) In depletion type of MOSFET channel is already present. (III) Pinch-off occurs at VDS < VGS − VTH

A

Only (I)

B

Only (II)

C

Only (III)

D

Only (I) & (II)

Consider the following statements regarding Thyristor: 1. It conducts when forward biased and positive current flows through the gate 2. It conducts when forward biased and negative current flows through the gate 3. It commutates when reverse biased and negative current flows through the gate 4. It commutates when the gate current is withdrawn Which of these statement(s) is/are correct?

A

1, 2 and 3

B

1 and 2 only

C

2 and 3 only

D

1 only

A depletion type N channel MOSFEt with knW/L = 2 mA/V2 and Vt = 3V has its source and gate grounded. For Vd = 0.1V and neglecting channel length modulating effect. Find drain current.

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