Related Questions

A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?
The GaAs fabrication has _________ gate geometry.
Method used for fabrication of GaAs FET is
GaAs is used in the fabrication of GUNN diodes because:
Assertion (A): An LTI discrete system represented by the difference equation. y (n+2)-5y(n+1)+6y(n) =x(n) is unstable. Reason (R): A system is unstable if the roots of the characteristic equation lie outside the unit circle.