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Method used for fabrication of GaAs FET is
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?
A GaAs injection laser with an optical cavity has refractive index of 3.6. Calculate the reflectivity for normal incidence of the plane wave on the GaAs-air interface.
The total efficiency of an injection laser with GaAs active region is 12%. The applied voltage is 3.6 V and band gap energy for GaAs is 2.34 eV. Determine external power efficiency.
How does a FET behave when the v-I characteristics are to the left of pinch off for an n channel FET?
The GaAs fabrication has _________ gate geometry.
Wafers in GaAs fabrication are thermally unstable.
GaAs is used in the fabrication of GUNN diodes because:
Thermal runaway is not possible in FET because as the temperature of FET increases
Consider the following statements regarding a differential amplifier using an FET pair. The differential output offset voltage is due to: 1. Mismatch between FET parameters 2. Difference between the values of resistors used in the circuit even though they are marked nominally equal 3. Variation in the operating voltage of the circuit Which of the above statements are correct?