GaAs is used in the fabrication of GUNN diodes because:

GaAs is used in the fabrication of GUNN diodes because: Correct Answer less forbidden energy gap

In GaAs, the conduction band lies directly above the top of the valence band. The lowest energy conduction band in GaAs is called as primary valley. GaAs consists of six secondary valleys. The bottom of one of the secondary valley is at an energy difference of 0.35 eV with the bottom of the primary valley in conduction band.

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GaAs is used in fabricating Gunn diode. Gunn diode is:
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?
Silicon is not suitable for fabrication of light emitting diodes because it is
Method used for fabrication of GaAs FET is