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How many masking stages does fabrication of GaAs FET require?
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?
A GaAs injection laser with an optical cavity has refractive index of 3.6. Calculate the reflectivity for normal incidence of the plane wave on the GaAs-air interface.
The total efficiency of an injection laser with GaAs active region is 12%. The applied voltage is 3.6 V and band gap energy for GaAs is 2.34 eV. Determine external power efficiency.
Consider the following statements (a) BJT is a current controlled device with high input impedance and high gain band width (b) FET is a voltage- controlled device with high input impedance and low gain bandwidth (c) UJT is a negative resistance device and can be used as an oscillator (d) FET and UJT can be used for amplification Which of the above statements are correct 
GaAs is used in the fabrication of GUNN diodes because:
Consider the following statements regarding a differential amplifier using an FET pair. The differential output offset voltage is due to: 1. Mismatch between FET parameters 2. Difference between the values of resistors used in the circuit even though they are marked nominally equal 3. Variation in the operating voltage of the circuit Which of the above statements are correct?
The GaAs fabrication has _________ gate geometry.
Wafers in GaAs fabrication are thermally unstable.
Thermal runaway is not possible in FET because as the temperature of FET increases