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Silicon devices can be employed for a higher temperature limit (190°C to 200°C) as compared to germanium devices (85°C to 100°C). With respect to this, which of the following are incorrect? 1) Higher resistivity of silicon 2) Higher gap energy of silicon 3) Lower intrinsic concentration of silicon 4) Use of silicon devices in high-power applications Select the correct answer using the code given below:

Silicon devices can be employed for a higher temperature limit (190°C to 200°C) as compared to germanium devices (85°C to 100°C). With respect to this, which of the following are incorrect? 1) Higher resistivity of silicon 2) Higher gap energy of silicon 3) Lower intrinsic concentration of silicon 4) Use of silicon devices in high-power applications Select the correct answer using the code given below: Correct Answer 1, 2 and 3

  • When silicon devices are employed for higher temperature limit of (190°C to 200°C) as compared to the Germanium devices (85°C to 100°C), this implies that silicon devices can be used in high-power applications as they support the flow of high amounts of currents. (Statement (4) is correct)
  • The intrinsic concentration is a function of temperature and it is directly proportional to the number of electron-hole pair generated at a given temperature.
  • At room temperature (300 K or 27°C), Germanium has a greater value of intrinsic concentration than silicon, i.e. Si = 1.5 × 1010 cc
  • This is because the energy band gap of Germanium (0.72), is lesser than that of silicon (1.1 eV) at room temperature.

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  • The energy band determines the electrical conductivity. At room temperature, the energy band gap of silicon is higher than in Germanium which results in Germanium having a high conductivity than silicon. i.e. silicon has a higher resistivity.


∴ Statements 1, 2, 3 imply one another and these are incorrect of the fact that silicon can be employed at a higher temperature compared to ‘Ge’, silicon be employed in high power applications.

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