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For faithful amplification by a transistor circuit, the value of VBE should ___________ for a silicon transistor
For germanium transistor amplifier, VCE should ___________ for faithful amplification
Silicon devices can be employed for a higher temperature limit (190°C to 200°C) as compared to germanium devices (85°C to 100°C). With respect to this, which of the following are incorrect? 1) Higher resistivity of silicon 2) Higher gap energy of silicon 3) Lower intrinsic concentration of silicon 4) Use of silicon devices in high-power applications Select the correct answer using the code given below:
In the given circuit, using a silicon BJT, what is the value of VCE?
The total thermal resistance of a power transistor and heat sink is 20°C/W. The ambient temperature is 25°C and (TJ)MAX=200°C. If VCE=4V, find the maximum collector current that the transistor can carry without destruction. What will be the allowed value of collector current if ambient temperature rises to 75°C?
In a transistor amplifier circuit VCE = VCB + ___________
For proper amplification by a transistor circuit, the operating point should be located at the ___________ of the d.c. load line
The maximum power dissipation of a transistor is 100mW. If VCE = 20 V and β = 100 what is the maximum collector current that can be allowed without destruction of the transistor
The total thermal resistance of a power transistor and heat sink is 20°C/W. The ambient temperature is 25°C and (TJ)MAX=200°C. If VCE=4V, find the maximum collector current that the transistor can carry without destruction.
The transistor is used in the circuit shown below has a β of 30 and ICB0 is negligible with VEE= -12 V at emitter end. VBE = 0.7 V VCE(sat) = 0.2 V If the forward voltage drop of diode is 0.7 V. Then the current through collector will be