For germanium transistor amplifier, VCE should ___________ for faithful amplification

For faithful amplification by a transistor circuit, the value of VCE should ___________ for silicon transistor

A

Not fall below 1 V

B

Be zero

C

Be 0.2 V

D

None of the above

For faithful amplification by a transistor circuit, the value of VBE should ___________ for a silicon transistor

A

Be zero

B

Be 0.01 V

C

Not fall below 0.7 V

D

Be between 0 V and 0.1 V

In a transistor amplifier circuit VCE = VCB + ___________

A

VBE

B

2 VBE

C

5 VBE

D

None of the above

The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor

A

One hundredth

B

One tenth

C

One thousandth

D

One millionth

The maximum power dissipation of a transistor is 100mW. If VCE = 20 V and β = 100 what is the maximum collector current that can be allowed without destruction of the transistor

A

10 mA

B

5 mA

C

0.05 mA

D

2.5 mA

The total thermal resistance of a power transistor and heat sink is 20°C/W. The ambient temperature is 25°C and (TJ)MAX=200°C. If VCE=4V, find the maximum collector current that the transistor can carry without destruction.

A

3.67A

B

7.56A

C

2.19A

D

4.16A

The total thermal resistance of a power transistor and heat sink is 20°C/W. The ambient temperature is 25°C and (TJ)MAX=200°C. If VCE=4V, find the maximum collector current that the transistor can carry without destruction. What will be the allowed value of collector current if ambient temperature rises to 75°C?

A

3.67A

B

7.56A

C

2.19A

D

1.56A

The amplification factor for transistor when used as an amplifier will be ___________

A

25

B

50

C

75

D

100

A semiconductor X is made by doping a germanium crystal with arsenic (Z = 33). A second semiconductor is made by doping germanium with indium (Z = 49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct

A

X us O-type, Y is N-type and the junction is forward biased

B

X is N-type, Y is P-type and the junction is forward biased

C

X is P-type, Y is N-type and the junction is reverse biased

D

X is N-type, Y is P-type and the junction is reverse biased

A germanium transistor used as an amplifier has a collector cut off current ICBO=10µA at a temperature 27°C and β=50. What is the collector current when the base current is 0.25mA?

A

10.76mA

B

13.01mA

C

15.67mA

D

11.88Ma

For germanium transistor amplifier, VCE should ___________ for faithful amplification

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