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For faithful amplification by a transistor circuit, the value of VCE should ___________ for silicon transistor
The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________
For germanium transistor amplifier, VCE should ___________ for faithful amplification
The maximum power dissipation of a transistor is 100mW. If VCE = 20 V and β = 100 what is the maximum collector current that can be allowed without destruction of the transistor
The total thermal resistance of a power transistor and heat sink is 20°C/W. The ambient temperature is 25°C and (TJ)MAX=200°C. If VCE=4V, find the maximum collector current that the transistor can carry without destruction.
The total thermal resistance of a power transistor and heat sink is 20°C/W. The ambient temperature is 25°C and (TJ)MAX=200°C. If VCE=4V, find the maximum collector current that the transistor can carry without destruction. What will be the allowed value of collector current if ambient temperature rises to 75°C?
What is the minimum power rating required for a transistor used in class A amplifier with a single transistor if the amplifier delivers 50 W to a transformer-coupled load? Assume that the transformer is ideal?
The input resistance of a silicon transistor is 100 Ω. The Base current is changed by 40 μA which results in a change in collector current by 2 mA. This transistor is used as a common emitter amplifier with a load resistance of 4 KΩ. The voltage gain of the amplifier is:
The transistor is used in the circuit shown below has a β of 30 and ICB0 is negligible with VEE= -12 V at emitter end. VBE = 0.7 V VCE(sat) = 0.2 V If the forward voltage drop of diode is 0.7 V. Then the current through collector will be
In the circuit, transistor has β =60, VBE=0.7V. Find the collector to emitter voltage drop VCE.