Bissoy.com
Doctors Medicines MCQs Q&A

Related Questions

The Transfer characteristic of the different types of MOSFETs is shown below, where ID is drain current and VGS is the Gate-Source voltage, the correct combination of MOSFET w.r.t to transfer characteristics is: Types of MOSFET (P) P – Channel Enhancement MOSFET (Q) P – Channel Depletion MOSFET (R) N – Channel Enhancement MOSFET (S) N – Channel Depletion MOSFET
Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT
A, B, C, D and E belong to five different cities P, Q, R, S and T (not necessarily in that order). Each one of them comes from a different city. Further it is given that: 1. B and C do not belong to Q. 2. B and E do not belong to P and R. 3. A and C do not belong to R, S, and T. 4. D and E do not belong to Q and T. Which one of the following statements is not correct?
For the circuit given below, the inductance measured across the terminals 1 and 2 was 15 H with open terminals 3 and 4. It was 30 H when terminals 3 and 4 were short-circuited. Both the inductors are having inductances 2H. The coefficient of coupling is ______________
P, Q, R, S, T and U are six persons who have different mobiles - Nokia, Vivo, Oppo, Samsung, Apple and Jio (but not necessarily in the same order). P does not have Apple mobile. U does not have Oppo nor Vivo mobile. T has a Nokia mobile. R does not have Oppo nor Apple mobile. Q does not have Samsung nor Oppo mobile. P does not have Oppo nor Jio mobile. U does not have Jio nor Apple mobile. Which of the following combinations is correct?
How many terminals does a MOSFET have?
Which of the following statement/s about MOSFET is correct? (I) In the P-type device current flows due to electrons. (II) In depletion type of MOSFET channel is already present. (III) Pinch-off occurs at VDS < VGS − VTH
Consider the following statements for Poly-Si deposition: 1. Poly-Si layer is used for gate electrode of MOSFET because it has similar lattice constants with SiO2. 2. Poly-Si layer used for gate electrode of MOSFET for the better mechanical stability due to different thermal expansion coefficients. 3. In VLSI circuits, interconnects can be completed in one or two metal levels. 4. Poly-Si is used for short interconnects. Which of the above statements are correct ?
The following item consists of two statements, one labeled as the 'Statement (I)' and the other as 'Statement (II)'. Examine these two statements carefully and select the answers to these items using the codes given below: Statement (I): MOSFET is a field-effect transistor whose drain current is controlled by the voltage applied at the gate. Statement (II): MOSFET is an insulated gate FET. Codes:
Why is an N-channel MOSFET preferred over a P-channel MOSFET?