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How many terminals does a MOSFET have?

How many terminals does a MOSFET have? Correct Answer Four

MOSFET has four terminals. These terminals are namely Source, drain, gate and substrate. The source and drain are heavily doped which can be either of P-type or N-type material and the substrate in lightly doped of either N-type or P-type material respectively.

Related Questions

The Transfer characteristic of the different types of MOSFETs is shown below, where ID is drain current and VGS is the Gate-Source voltage, the correct combination of MOSFET w.r.t to transfer characteristics is: Types of MOSFET (P) P – Channel Enhancement MOSFET (Q) P – Channel Depletion MOSFET (R) N – Channel Enhancement MOSFET (S) N – Channel Depletion MOSFET
Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT
For the circuit given below, the inductance measured across the terminals 1 and 2 was 15 H with open terminals 3 and 4. It was 30 H when terminals 3 and 4 were short-circuited. Both the inductors are having inductances 2H. The coefficient of coupling is ______________
P, Q, R, S, T and U are six persons who have different mobiles - Nokia, Vivo, Oppo, Samsung, Apple and Jio (but not necessarily in the same order). P does not have Apple mobile. U does not have Oppo nor Vivo mobile. T has a Nokia mobile. R does not have Oppo nor Apple mobile. Q does not have Samsung nor Oppo mobile. P does not have Oppo nor Jio mobile. U does not have Jio nor Apple mobile. Which of the following combinations is correct?
Which of the following terminals does not belong to the MOSFET?
A MOSFET has how many terminals:
Why is an N-channel MOSFET preferred over a P-channel MOSFET?
Which of the following statement/s about MOSFET is correct? (I) In the P-type device current flows due to electrons. (II) In depletion type of MOSFET channel is already present. (III) Pinch-off occurs at VDS < VGS − VTH
The following item consists of two statements, one labeled as the 'Statement (I)' and the other as 'Statement (II)'. Examine these two statements carefully and select the answers to these items using the codes given below: Statement (I): MOSFET is a field-effect transistor whose drain current is controlled by the voltage applied at the gate. Statement (II): MOSFET is an insulated gate FET. Codes:
Consider the following statements for Poly-Si deposition: 1. Poly-Si layer is used for gate electrode of MOSFET because it has similar lattice constants with SiO2. 2. Poly-Si layer used for gate electrode of MOSFET for the better mechanical stability due to different thermal expansion coefficients. 3. In VLSI circuits, interconnects can be completed in one or two metal levels. 4. Poly-Si is used for short interconnects. Which of the above statements are correct ?