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Consider the following statements for Poly-Si deposition: 1. Poly-Si layer is used for gate electrode of MOSFET because it has similar lattice constants with SiO2. 2. Poly-Si layer used for gate electrode of MOSFET for the better mechanical stability due to different thermal expansion coefficients. 3. In VLSI circuits, interconnects can be completed in one or two metal levels. 4. Poly-Si is used for short interconnects. Which of the above statements are correct ?

Consider the following statements for Poly-Si deposition: 1. Poly-Si layer is used for gate electrode of MOSFET because it has similar lattice constants with SiO2. 2. Poly-Si layer used for gate electrode of MOSFET for the better mechanical stability due to different thermal expansion coefficients. 3. In VLSI circuits, interconnects can be completed in one or two metal levels. 4. Poly-Si is used for short interconnects. Which of the above statements are correct ? Correct Answer 2, 3 and 4 only

Here, statement 1 is wrong and remaining statements are true, because polysilicon layer is used as gate electrode to reduce the threshold voltage Vt of the MOSFET.

Since Vt depends on ϕms (metal-semiconductor work function) and using polysilicon reduces ϕms and hence Vt reduces.

Related Questions

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