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What is the main drawback of silicon nanowires used in FET devices for sensing?

What is the main drawback of silicon nanowires used in FET devices for sensing? Correct Answer Exponential decay of electrostatic potential

In field effect transistor (FET) devices the charges on dissolved molecules and macromolecules are screened by dissolved counterions. This happens because in most cases molecules bound to the devices are separated from the sensor surface by about 2-12nm. Consequently, the electrostatic potential arising from the charges on the analyte molecule decay exponentially towards zero with distance.

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