Nanotechnology MCQ

Test your knowledge with important Nanotechnology MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Nanotechnology MCQs at Bissoy

• Which of these is not a major ability of atomic force microscopy?
  ক

  Topographic imaging

  খ

  Pressure measurement

  গ

  Force measurement

  ঘ

  Manipulation
• Pick out the odd one out from the following statements regarding atomic force microscopy.
  ক

  Provides a 3D surface profile

  খ

  Does not suffer from charging artifacts in the final image

  গ

  Functions perfectly in a liquid environment

  ঘ

  Has a maximum scanning area
• Which of the following is not an application of atomic force microscopy in solid state physics?
  ক

  Study changes in physical properties

  খ

  Identifying atoms at the surface

  গ

  Evaluation of interactions between a specific atom and neighboring atoms

  ঘ

  Image microtubules and measure their stiffness
• What is the major difference between AFM and optical microscopy?
  ক

  Maintenance

  খ

  Beam irradiation

  গ

  Resolution

  ঘ

  Cost of the device
• Who invented Atomic Force Microscope?
  ক

  Gerd Binning and Calvin Quate

  খ

  Ernst Ruska and Klaus Von Klitzing

  গ

  Heinrich Rohrer and Hans Daucher

  ঘ

  Wolfgang Ebert and Felix Bloch
• Which of the given expressions correctly indicates the exponential decay of the current amplitude with the distance?
  ক

  I = JA

  খ

  I ~ Ve-cd

  গ

  I = √(P/R)

  ঘ

  I ~ Mdɛ
• Choose the correct statement from the following with respect to constant current mode.
  ক

  Very fast mode of sample scanning

  খ

  Feedback electronics adjust height by a voltage

  গ

  Height of the scanner remains unchanged irrespective of the sample topography

  ঘ

  Image scanned has only electron density data
• What is the separation kept between the tip and sample while raster scanning of the sample?
  ক

  4Å -7Å

  খ

  5Å- 15Å

  গ

  30Å – 40Å

  ঘ

  55Å – 70Å
• Predict the order of steps followed during viewing a sample under scanning tunneling microscopy.
  ক

  Tip is held close to sample ➔ Application of bias voltage between tip and ample ➔ Tip receives tunneling current ➔ Tip is moved across the surface ➔ Digital images of the surface are formed

  খ

  Digital images of the surface are formed ➔ Tip receives tunneling current ➔ Application of bias voltage between tip and ample ➔ Tip is moved across the surface ➔ Tip is held close to sample

  গ

  Application of bias voltage between tip and ample ➔ Tip is held close to sample ➔ Tip receives tunneling current ➔ Digital images of the surface are formed ➔ Tip is moved across the surface

  ঘ

  Tip receives tunneling current ➔ Digital images of the surface are formed ➔ Tip is moved across the surface ➔ Tip is held close to sample ➔ Application of bias voltage between tip and ample
• What has to be done for obtaining usable results in the presence of extremely sensitive tunneling current?
  ক

  Electrical levitation

  খ

  Undamping vibrations with eddy currents

  গ

  Acoustic oscillation

  ঘ

  Use of gas spring systems
• What is the material used for constructing the scanner tube?
  ক

  Silicon carbide ceramic composites

  খ

  Aluminium nitride ceramic

  গ

  Lead zirconate titanate ceramic

  ঘ

  Zirconium oxide – alumina ceramic
• Which of the following is not a drawback of the scanning tunneling microscopy?
  ক

  Clean and stable surface

  খ

  Sharp tips

  গ

  Complicated electronics

  ঘ

  High resolution
• Which of these statements best matches the description of scanning tunneling spectroscopy?
  ক

  Tip of microscope is in a constant position above the surface

  খ

  The bias voltage is kept constant

  গ

  The technique is always carried out in low magnetic fields

  ঘ

  No reconstruction of local density of the electronic states
• What is the principle behind scanning tunneling microscope?
  ক

  Mass – energy equivalence

  খ

  Quantum tunneling

  গ

  Special relativity

  ঘ

  Kinetic molecular theory
• Who were the inventers of scanning tunneling microscope?
  ক

  C.V Raman and Pearl Kendrick

  খ

  Antonie Van Leewenhoek and Aaron Klug

  গ

  Heirich Rohrer and Gerd binning

  ঘ

  Robert Boyle and Zhang Heng
• How is it possible to tune the surface roughness of the electrodeposited nanowires?
  ক

  Increasing the available surface

  খ

  Selecting suitable polymer membranes

  গ

  Smoothening the nanowires

  ঘ

  Increasing the electrodeposition
• The nanocones electrodeposited with CuSO4 based electrolyte have poor mechanical stability.
  ক

  True

  খ

  False
• Why are rough cylindrical wires preferred to the smooth ones for catalytic applications?
  ক

  Increased electrodeposition

  খ

  Reduced electrical conductivity

  গ

  Increased surface area

  ঘ

  Reduced thermal conductivity
• Why do gold nanowires have such high yield strength upon decreasing their size?
  ক

  Increased defects in solids

  খ

  Poor gate control over the channel

  গ

  Lack of dislocations

  ঘ

  Dielectrophoretic manipulation
• Why is the quantization of conductivity more pronounced in semiconductors?
  ক

  Higher effective mass

  খ

  Lower threshold voltage

  গ

  Lower gate voltage

  ঘ

  Lower electron density
• Why are high efficiency photovoltaic devices being created from nanowires?
  ক

  Less sensitive to impurities

  খ

  Increased material consumption

  গ

  Poor gate control over channel

  ঘ

  Retarding optical properties
• What can increase the sensitivity of the cardiac biomarkers in detecting acute myocardial infarction?
  ক

  Consolidation of antibody capturing units

  খ

  Change in surface potential

  গ

  More intimate binding to target protein

  ঘ

  Tuning conducting channel
• Silicon nanowires can be employed for the detection of nitro-aromatic explosives.
  ক

  True

  খ

  False
• What is the main drawback of silicon nanowires used in FET devices for sensing?
  ক

  Control over surface receptor density

  খ

  Exponential decay of electrostatic potential

  গ

  Fragmentation of antibody capturing units

  ঘ

  Screening of dissolved molecules by counter ions
• Which of these is not an issue faced by the industries in using nanowires in commercial products?
  ক

  Isolation of nanowires

  খ

  Handling of nanowires

  গ

  Integration of nanowires into electric circuits

  ঘ

  Potential for ultimate sensitivity
• Which of these statements best describes nanowire lasers?
  ক

  II-IV semiconductor heterostructures

  খ

  Solid state laser using synthetic ruby crystal as its laser medium

  গ

  Structures possessing low refractive index that allow low optical loss

  ঘ

  Fabry-Perot resonator cavities with high reflectivity end facets
• Why are nanowires proposed to be used in MOSFETs?
  ক

  Poor gate control over channels

  খ

  High aspect ratio

  গ

  Involves bulky recombination

  ঘ

  No channel electrostatic potential
• What is the main challenge faced by the bottom-up process in nanowire development?
  ক

  Integration into large-scale machineries

  খ

  Production of complex superlattice structure

  গ

  Explicit control of nanowire composition

  ঘ

  Provide template for subsequent processing
• Which of these is not an advantage of the vapour liquid solid growth method employed for the synthesis of nanowires?
  ক

  Compositional control

  খ

  Production of superlattice structure

  গ

  Controlled non-catalytic growth method

  ঘ

  Nanometer-scale bandgap modulation
• Why are top down methods so much in use for the fabrication of nanowires?
  ক

  Slow production rate

  খ

  Lack complex electronic characteristics

  গ

  Increase the cost of production

  ঘ

  Formation of ordered arrays of nanowires