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What are the conditions for the growth of ZnO layers on the p-type silicon wafer in MBE technique for nanorod synthesis?

What are the conditions for the growth of ZnO layers on the p-type silicon wafer in MBE technique for nanorod synthesis? Correct Answer Chamber pressure ⁓ (1-4) × 10-4 mbar

The molecular beam epitaxy (MBE) system can be used to grow the ZnO layers on the p-type silicon wafer under certain conditions. These are – substrate temperature ranging between (300-430)°C, temperature of the Zn-Knudsen cell of about 300°C, pressure of the chamber, during growth, in the range of (1-4) × 10-4 mbar, purity of the Zn beads of about 99.999%.

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