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For a fixed bias circuit the drain current was 1mA, VDD=12V, determine drain resistance required if VDS=10V?
Consider the following statements regarding n-channel JFET: 1. The maximum drain current IDSS occurs when gate-to-source voltage VGS = 0 V and drain-to-source voltage VDS ≥ |VP|. (VP is pinch-off voltage). 2. For gate-to-source voltage VGS less than the pinch-off level, the drain current is 0 A. 3. For all levels of VGS between 0 V and the pinch-off level, the current ID will range between IDSS and 0 A, respectively. which of the above statements are correct ?
For a self-bias circuit, find drain to source voltage if VDD=12V, ID=1mA, Rs=RD=1KΩ?
Consider the circuit shown below which reduces the impact of the input bias current. If IB1 = IB2 = Input bias current, then determine the value of R3 so that the output voltage (v0) is not impacted by the input bias current.
Availability of drinking water is continuously decreasing. The government decided to identify those sources of drinking water which getting polluted. The following table depicts the number of polluted sources in a district. Source of drinking water getting polluted Number Wells 24 Handpump 12 Dam 12 Borewell 6 Ponds 18 The pictograph table for the above table will be (A) Source of drinking water getting polluted Number symbol = 6 source Wells Handpump Dam Borewell Ponds (B) Source of drinking water getting polluted Number symbol  = 6 source Wells Handpump Dam Borewell Ponds (C) Source of drinking water getting polluted Number symbol  = 6 source Wells Handpump Dam Borewell Ponds (D) Source of drinking water getting polluted Number symbol  = 6 source Wells Handpump Dam Borewell Ponds
Which of the following conditions must be satisfied for a transistor to be in saturation? 1. Its collector to base junction should be under forward bias 2. Its collector to base junction should be under reverse bias 3. Its emitter to base junction should be under reverse bias 4. Its emitter to base junction should be under forward bias Which of the above conditions are correct?
If CT is the transition capacitance, which of the following are true? 1) in forward bias, CT dominates 2) in reverse bias, CT dominates 3) in forward bias, diffusion capacitance dominates 4) in reverse bias, diffusion capacitance dominates
Consider the following statements regarding reciprocity theorem : 1. In any passive linear bilateral network, if the single voltage source Vx, in branch x produces the current response Iy, in branch y, then the removal of the voltage source from branch x and its insertion in branch y will produce the current response iy in branch x. 2. The interchange of an ideal voltage source and an ideal ammeter in any passive, linear, bilateral circuit will not change the ammeter reading. 3. The interchange of an ideal current source and an ideal voltmeter in any passive linear bilateral circuit will change the voltmeter reading. Which of the above statements are correct ?
Various measurements are made on an NMOS amplifier for which the drain resistor RD is 20 kΩ. First, DC measurements show the voltage across the drain resistor, VRD, to be 2 V and the gate-to-source bias voltage to be 1.2 V. Then, ac measurements with small signals show the voltage gain to be −10 V/V. What is the value of Vt for this transistor?
Various measurements are made on an NMOS amplifier for which the drain resistor RD is 20 kΩ. First, DC measurements show the voltage across the drain resistor, VRD, to be 2 V and the gate-to-source bias voltage to be 1.2 V. Then, ac measurements with small signals show the voltage gain to be −10 V/V. If the process transconductance parameter is 50μA/V2, what is the MOSFET’s W/L?