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Choose the right option among the alternatives – A transistor conducts in its forward direction when its collector/emitter/base, is positive with respect to its collector/emitter/base, and when a turn-on voltage or current signal is applied to its collector/emitter/base.
A transistor is used in common emitter mode as an amplifier. Then a. The base-emitter junction is forward biased b. The base-emitter junction is reverse biased  c. The input signal is connected in series with the voltage applied to the base-emitter junction  d. The input signal is connected in series with the voltage applied to bias the base-collector junction Which of the following statement is true?
For a narrow base PNP BJT, the excess minority carrier concentrations (ΔnE for emitter, ΔpB for base, ΔnC for collector) normalized to equilibrium minority carrier concentrations (nE0 for emitter, pB0 for base, nC0 for collector) in the quasi-neutral emitter, base and collector regions are shown below. Which one of the following biasing modes is the transistor operating in?
For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
The collector supply voltage for a CE configured transistor is 10V. The resistance RL=800Ω. The voltage drop across RL is 0.8V. Find the value of collector emitter voltage.
For an emitter feedback bias circuit, the value of VCC = 10V, RB = 10Kohm, RE=1Kohm and RC=2Kohm, if current flowing through collector is 0.5mA, what is the voltage difference between collector and emitter?
Consider the following statements regarding an N-P-N Bipolar Junction Transistor: 1. Emitter diode is forward biased and the collector diode is reverse biased 2. Emitter has many free electrons 3. Free electrons are injected into the base and pass through the collector 4. Depletion layers around junction J1 and J2 of BJT are widened. Which of the above statements are correct?
In the circuit, transistor has β =60, VBE=0.7V. Find the collector to emitter voltage drop VCE.
Which of the following conditions must be satisfied for a transistor to be in saturation? 1. Its collector to base junction should be under forward bias 2. Its collector to base junction should be under reverse bias 3. Its emitter to base junction should be under reverse bias 4. Its emitter to base junction should be under forward bias Which of the above conditions are correct?
A transistor is connected in CB configuration. The emitter voltage is changed by 200mV, the emitter by 5mA. During this transition the collector base voltage is kept constant. What is the input dynamic resistance?