Bissoy.com
Doctors Medicines MCQs Q&A

Which of the following is true for a pnp transistor in saturation region?

Which of the following is true for a pnp transistor in saturation region? Correct Answer CB junction is forward bias and the EB junction is forward bias

Whether the transistor in npn or pnp, for it be in saturation region the EB junction must be forward bias the CB junction must be forward bias.

Related Questions

Which of the following regions of operation are mainly responsible for heating of the transistor under switching operation? 1. Saturation region 2. Cut-off region 3. Transition from saturation to cut-off 4. Transition from cut-off to saturation
The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________
You configure your Windows 2000 Server as a print server. You install a second PnP Network adapter to improve the performance. The first adapter uses IRQ11, and the second adapter uses IRQ5. The server is now unable to print to print devices connected to a non-PnP LPT2 port adapter. You want to continue to use the print devices connected to your print server. What should you do?
Which of the following is true for a pnp transistor in active region?
In which of the below-mentioned logic families, the transistors operate between cut-off and active (non-saturation) states? (i) Transistor-Transistor Logic (TTL) (ii) Schottky TTL (iii) Diode Transistor Logic (DTL) (iv) Emitter Coupled Logic (ECL) Choose the correct answer from the code given below: Code:
Thermal runaway in a transistor biased in the active region is primarily due to a) heating of the transistor b) changes in β, which increases with temperature c) base emitter voltage VBE which decreases with rise in temperature d) change in reverse saturation current due to rise in temperature Which of the following options is correct?
Thermal runaway in a transistor biased in the active region is due to 1. heating of the transistor. 2. change in β due to an increase in temperature. 3. change in reverse collector saturation current due to a rise in temperature. 4. base-emitter voltage VBE which decreases with rise in temperature. Which of the above statements is/are correct?
In a PNP transistor operating in active region, the main stream of current is_________
For a pnp transistor in the active region the value of Vce (potential difference between the collector and the base) is
Reverse collector saturation is greater than Reverse saturation current because of reverse collector saturation __________