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For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
For a narrow base PNP BJT, the excess minority carrier concentrations (ΔnE for emitter, ΔpB for base, ΔnC for collector) normalized to equilibrium minority carrier concentrations (nE0 for emitter, pB0 for base, nC0 for collector) in the quasi-neutral emitter, base and collector regions are shown below. Which one of the following biasing modes is the transistor operating in?
For a pnp transistor in the active region the value of Vce (potential difference between the collector and the base) is
Which of the following conditions must be satisfied for a transistor to be in saturation? 1. Its collector to base junction should be under forward bias 2. Its collector to base junction should be under reverse bias 3. Its emitter to base junction should be under reverse bias 4. Its emitter to base junction should be under forward bias Which of the above conditions are correct?
Choose the right option among the alternatives – A transistor conducts in its forward direction when its collector/emitter/base, is positive with respect to its collector/emitter/base, and when a turn-on voltage or current signal is applied to its collector/emitter/base.
Reverse collector saturation is greater than Reverse saturation current because of reverse collector saturation __________
Reverse collector saturation is greater than Reverse saturation current because reverse collector saturation __________
Which of the following regions of operation are mainly responsible for heating of the transistor under switching operation? 1. Saturation region 2. Cut-off region 3. Transition from saturation to cut-off 4. Transition from cut-off to saturation
Thermal runaway in a transistor biased in the active region is due to 1. heating of the transistor. 2. change in β due to an increase in temperature. 3. change in reverse collector saturation current due to a rise in temperature. 4. base-emitter voltage VBE which decreases with rise in temperature. Which of the above statements is/are correct?
Consider an NMOS transistor having kn= 2 mA/V2. Let the transistor be biased at VOV = 1V. For operation in saturation, what dc bias current ID results? If a +0.1-V signal is superimposed on VGS, find the corresponding increment in collector current by evaluating the total collector current ID and subtracting the dc bias current ID.