Analog Electronic Circuits MCQ

Test your knowledge with important Analog Electronic Circuits MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Analog Electronic Circuits MCQs at Bissoy

• In the given circuit using a silicon BJT, what is the value of saturation collector current?
  ক

  10 mA

  খ

  8.77 mA

  গ

  6.67 mA

  ঘ

  5 mA
• In the given circuit, what is the value of VE when using a silicon BJT?
  ক

  2.01 V

  খ

  0.28 V

  গ

  0 V

  ঘ

  2.28 V
• In the given circuit, using a silicon BJT, what is the value of VCE?
  ক

  20 V

  খ

  15.52 V

  গ

  14.98 V

  ঘ

  13.97 V
• In the given circuit, what is the value of IC if the BJT is made of Silicon?
  ক

  2.01 mA

  খ

  2.01 uA

  গ

  10.05 mA

  ঘ

  10.05 uA
• From the given circuit, using silicon BJT, what is the value of the saturation collector current?
  ক

  5 mA

  খ

  5.36 mA

  গ

  5.45 mA

  ঘ

  10.9 mA
• From the given circuit, using a silicon BJT, what is the value of VBC?
  ক

  6.13 V

  খ

  -6.13 V

  গ

  7 V

  ঘ

  -7 V
• From the given circuit, using a silicon BJT, what is the value of VCEQ?
  ক

  7 V

  খ

  0.7 V

  গ

  6.83 V

  ঘ

  7.17 V
• From the given circuit, using a silicon transistor, what is the value of IBQ?
  ক

  47.08 mA

  খ

  47.08 uA

  গ

  50 uA

  ঘ

  0 mA
• For best operation of a BJT, which region must the operating point be set at?
  ক

  Active region

  খ

  Cutoff region

  গ

  Saturation region

  ঘ

  Reverse active region
• Which of the following is the correct relationship between base and emitter current of a BJT?
  ক

  IB = β IE

  খ

  IB = IE

  গ

  IB = (β + 1) IE

  ঘ

  IE = (β + 1) IB
• For the given transistor, what is the correct sequence of the pins from left to right?
  ক

  ECB

  খ

  BCE

  গ

  CEB

  ঘ

  CBE
• If the positive lead of a DMM, with the mode set to ohmmeter is connected to the base and the negative lead to the emitter and a high resistance reading is obtained, then what is the type of transistor that is being tested?
  ক

  npn

  খ

  pnp

  গ

  faulty

  ঘ

  not a transistor, it is a FET
• If the positive lead of a DMM, with the mode set to ohmmeter is connected to the base and the negative lead to the emitter and a low resistance reading is obtained, then what is the type of transistor that is being tested?
  ক

  NPN

  খ

  PNP

  গ

  Faulty transistor

  ঘ

  Not a transistor, it is a FET
• From the given curve tracer response, what is the value of β for IC = 7 mA and VCE = 5 V?
  ক

  150

  খ

  180

  গ

  250

  ঘ

  120
• Given that the collector power dissipation is 300 mW, what is the value of collector to emitter voltage for collector current = 50 mA?
  ক

  6 V

  খ

  3 V

  গ

  0 V

  ঘ

  2 v
• Given that the collector power dissipation is 300 mW, what is the value of collector current for the collector to emitter voltage = 12 V?
  ক

  50 mA

  খ

  0 mA

  গ

  25 mA

  ঘ

  100 mA
• From the given characteristics, the value of VCEsat is closest to which of the following values?
  ক

  0.3 V

  খ

  1 V

  গ

  5 V

  ঘ

  20V
• What is the region on the output characteristics for VCE < VCEsat called?
  ক

  Active region

  খ

  Cutoff region

  গ

  Saturation region

  ঘ

  Active & Cutoff region
• What is the region on the output characteristics below IC = ICEO line called?
  ক

  Active region

  খ

  Cutoff region

  গ

  Saturation region

  ঘ

  Active & Saturation region
• For a BJT, what is typically the shape of the power dissipation curve, if it’s plotted on the output characteristics?
  ক

  Parabola

  খ

  Linear

  গ

  Hyperbola

  ঘ

  Circular
• Which of the following relations are correct?
  ক

  IE + IB = IC

  খ

  IC + IB = IE

  গ

  IE + IC = IB

  ঘ

  IB + IE = IB
• Which of the following currents in a BJT is also called leakage current?
  ক

  IC

  খ

  IE

  গ

  ICO

  ঘ

  ICBO
• The collector current in a BJT is temparature-independent.
  ক

  True

  খ

  False
• What is the typical order of magnitude of the base current for a BJT?
  ক

  10 -8

  খ

  10 -9

  গ

  10 -6

  ঘ

  10 -3
• Which of the following statements is true about proper functioning of a BJT?
  ক

  One junction is forward biased and one is reverse biased

  খ

  Both junctions are forward biased

  গ

  Both junctions are reverse biased

  ঘ

  Can’t be determined
• In a pnp-BJT, when the E-B junction is forward biased and no voltage is applied across C-B junction, what happens to the width of the depletion region in the E-B junction?
  ক

  Increases

  খ

  Decreases

  গ

  Remains same

  ঘ

  Can’t be determined
• Considering the resistances of emitter, collector and base to be Re, Rc and Rb respectively, which of the following is the correct statements?
  ক

  Re > Rb > Rc

  খ

  Rc > Rb > Re

  গ

  Rb > Rc > Re

  ঘ

  Rb = Rc > Re
• In a BJT, which of the following layers is heavily doped?
  ক

  Collector

  খ

  Emitter

  গ

  Base

  ঘ

  Electron
• In a BJT, the outer layers are much more thick as compared to the middle layer.
  ক

  True

  খ

  False
• Which of the following is not a valid type of BJT?
  ক

  PNP

  খ

  NPN

  গ

  PPN

  ঘ

  NNP