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Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT
For a narrow base PNP BJT, the excess minority carrier concentrations (ΔnE for emitter, ΔpB for base, ΔnC for collector) normalized to equilibrium minority carrier concentrations (nE0 for emitter, pB0 for base, nC0 for collector) in the quasi-neutral emitter, base and collector regions are shown below. Which one of the following biasing modes is the transistor operating in?
In a silicon transistor, a change of 8 mA in emitter current produces a change of 7.8 mA in the collector current. What change in base current is necessary to produce an equivalent change in collector current?
Determine the value of emitter current and collector current of a transistor having α=0.98 and collector to base leakage current ICBO=4µA. The base current is 50µA.
Consider an NMOS transistor having kn= 2 mA/V2. Let the transistor be biased at VOV = 1V. For operation in saturation, what dc bias current ID results? If a +0.1-V signal is superimposed on VGS, find the corresponding increment in collector current by evaluating the total collector current ID and subtracting the dc bias current ID.
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector doping in atoms/cm3, respectively. If the emitter injection efficiency of the BJT is close to unity, which one of the following conditions is TRUE?
In a BJT, if the collector-base junction is reverse-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?
In a BJT, if the collector-base junction is forward-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?
In a BJT, if the collector-base junction and the base-emitter junction are both reverse-biased, which region is the BJT operating in?
Given collector resistance = 2kΩ, load resistance = 5kΩ, collector capacitance = 1μF, emitter capacitance = 20μF, collector current = 2mA, source resistance = 2kΩ. If the effect of blocking capacitor is ignored, find the applicable cut-off frequency.