In the given circuit, what is the value of VE when using a silicon BJT?

In the given circuit, what is the value of VE when using a silicon BJT? Correct Answer 2.28 V

Consider the BJT to be in saturation. Then IC=20-0.2/2k=9.9 mA And IB=20-0.8/430k=0.044 mA IBMIN=ICSAT/β=5.09/50=0.198mA which is greater than above IB. Hence transistor is in the active region. Thus IC=βIB. VBE=0.7V IB=20-0.7/430=44.88μA IC=50×44.88=2.24 mA VCE=20-2.24*2=15.52V VE=IERE=(1+β)IBRE=51*44.88*1=2.28V.
Bissoy MCQ

Related Questions

Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT
From the given circuit, using a silicon BJT, what is the value of VCEQ?
From the given circuit, using a silicon BJT, what is the value of VBC?
From the given circuit, using silicon BJT, what is the value of the saturation collector current?
In the given circuit, using a silicon BJT, what is the value of VCE?
In the given circuit using a silicon BJT, what is the value of saturation collector current?
In the given circuit, what is the value of IC if the BJT is made of Silicon?
For the BJT, β=∞, VBEon=0.7V VCEsat=0.7V. The switch is initially closed. At t=0, it is opened. At which time the BJT leaves the active region?
In a BJT, if the collector-base junction is reverse-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?
In a BJT, if the collector-base junction is forward-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?