Related Questions

The power gain in a transistor connected in ___________ arrangement is the highest
A common emitter
B common base
C common collector
D none of the above
The voltage gain of a transistor connected in common collector arrangement is ___________
A equal to 1
B more than 10
C more than 100
D less than 1
The input impedance of a transistor connected in ___________ arrangement is the highest
A common emitter
B common collector
C common base
D none of the above
The output impedance of a transistor connected in ___________ arrangement is the highest
A common emitter
B common collector
C common base
D none of the above
In order to get more voltage gain from a transistor amplifier, the transistor used should have ___________
A Thin base
B Thin collector
C Wide emitter
D None of the above
The values of h parameter of a transistor in CE arrangement are ___________ arrangement
A The same as for CB
B The same as for CC
C Different from that in CB
D None of the above
The most commonly used transistor arrangement is ___________ arrangement
A common emitter
B common base
C common collector
D none of the above
The phase difference between the input and output voltages of a transistor connected in common collector arrangement is ___________
A 0°
B 90°
C 180°
D 270°
A transistor is connected in CB mode. If it is not connected in CE mode with same bias voltages, the values of IE, IB and IC will ___________
A remain the same
B increase
C decrease
D none of the above
If the current gain of the amplifier is X, its voltage gain is Y, then its power gain will be
A $$\frac{{\text{X}}}{{\text{Y}}}$$
B X × Y
C X + Y
D X - Y

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