Related Questions

The values of h parameter of a transistor in CE arrangement are ___________ arrangement
A The same as for CB
B The same as for CC
C Different from that in CB
D None of the above
In order to get more voltage gain from a transistor amplifier, the transistor used should have ___________
A Thin base
B Thin collector
C Wide emitter
D None of the above
The most commonly used semiconductor in the manufacture of a transistor is ___________
A germanium
B silicon
C carbon
D none of the above
In a single stage transistor amplifier, RC and RL represent collector resistance and load resistance respectively. The transistor sees a d.c. load of ___________
A RC + RL
B RC || RL
C RL
D RC
For faithful amplification by a transistor circuit, the value of VBE should ___________ for a silicon transistor
A Be zero
B Be 0.01 V
C Not fall below 0.7 V
D Be between 0 V and 0.1 V
The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor
A One hundredth
B One tenth
C One thousandth
D One millionth
For faithful amplification by a transistor circuit, the value of VCE should ___________ for silicon transistor
A Not fall below 1 V
B Be zero
C Be 0.2 V
D None of the above
The value of collector load RC in a transistor amplifier is ___________ the output impedance of the transistor.
A The same as
B Less than
C More than
D None of the above
When the transistor (CE arrangement) is in the cut off region, the collector current is ___________.
A ICBO
B ICEO
C (ß + 1) ICEO
D IC(sat)
The voltage gain of a transistor connected in common collector arrangement is ___________
A equal to 1
B more than 10
C more than 100
D less than 1

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