Related Questions

কমন গ্রামিটার বর্তনীতে একটি n-p-n ট্রানজিস্টরের সংগ্রাহকে 8 V ব্যাটারী সংযুক্ত আছে। সংগ্রাহক Rt রোধের দুই প্রান্তে বিভব পতন 0.5 V হলে বেস কারেন্ট নির্ণয় কর। [দেওয়া আছে Rt = 800 Ω এবং বর্তনীর α =0.96)(An n-p-n transistor is connected in common emitter configuration in which the collector supply is 8 V. Determine the base current, if the voltage drops across the resistance Re of the collector circuit is 0.5 V. [Rt = 800Ω and α = 0.96])
A 0.625 mA
B 0.000625 mA
C 0.974 mA
D 0.026 mA
E 0.000026 mA
The phase difference between the input and output voltages of a transistor connected in common collector arrangement is ___________
A 0°
B 90°
C 180°
D 270°
The voltage gain in a transistor connected in ___________ arrangement is the highest
A common base
B common collector
C common emitter
D none of the above
The power gain in a transistor connected in ___________ arrangement is the highest
A common emitter
B common base
C common collector
D none of the above
When the transistor (CE arrangement) is in the cut off region, the collector current is ___________.
A ICBO
B ICEO
C (ß + 1) ICEO
D IC(sat)
In a single stage transistor amplifier, RC and RL represent collector resistance and load resistance respectively. The transistor sees a d.c. load of ___________
A RC + RL
B RC || RL
C RL
D RC
The value of collector load RC in a transistor amplifier is ___________ the output impedance of the transistor.
A The same as
B Less than
C More than
D None of the above
In order to get more voltage gain from a transistor amplifier, the transistor used should have ___________
A Thin base
B Thin collector
C Wide emitter
D None of the above
The values of h parameter of a transistor in CE arrangement are ___________ arrangement
A The same as for CB
B The same as for CC
C Different from that in CB
D None of the above
The most commonly used transistor arrangement is ___________ arrangement
A common emitter
B common base
C common collector
D none of the above

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