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For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
A transistor is used in common emitter mode as an amplifier. Then a. The base-emitter junction is forward biased b. The base-emitter junction is reverse biased  c. The input signal is connected in series with the voltage applied to the base-emitter junction  d. The input signal is connected in series with the voltage applied to bias the base-collector junction Which of the following statement is true?
Consider the following statements (a) BJT is a current controlled device with high input impedance and high gain band width (b) FET is a voltage- controlled device with high input impedance and low gain bandwidth (c) UJT is a negative resistance device and can be used as an oscillator (d) FET and UJT can be used for amplification Which of the above statements are correct 
When UJT is used for triggering an SCR, the wave-shape of the signal obtained from UJT circuit is
In case of the UJT firing circuit, when the UJT turns on
When a UJT is used for triggering an SCR, then the wave shape of voltage obtained from the UJT circuit will be ____________
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector doping in atoms/cm3, respectively. If the emitter injection efficiency of the BJT is close to unity, which one of the following conditions is TRUE?
Between the peak point and the valley point of UJT emitter characteristics we have ___________ region
To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage.
When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________.