The emitter of a transistor is ___________ doped

In a UJT, the p-type emitter is ___________ doped

A

Lightly

B

Heavily

C

Moderately

D

None of the above

The base of a transistor is ___________ doped

A

heavily

B

moderately

C

lightly

D

none of the above

The collector of a transistor is ___________ doped

A

heavily

B

moderately

C

lightly

D

none of the above

A transistor has how many doped regions?

A

1

B

2

C

3

D

4

E

None of the above

A single stage transistor amplifier with collector load RC and emitter resistance RE has a d.c. load of ___________

A

RC

B

RC || RE

C

RC - RE

D

RC + RE

As the temperature of a transistor goes up, the base emitter resistance ___________

A

decreases

B

increases

C

remains the same

D

none of the above

In a transistor, the base current is about ___________ of emitter current

A

25%

B

20%

C

35%

D

5%

The purpose of resistance in the emitter circuit of a transistor amplifier is to ___________

A

Limit the maximum emitter current

B

Provide base-emitter bias

C

Limit the change in emitter current

D

None of the above

At the base emitter junctions of a transistor, one finds ___________

A

a reverse bias

B

a wide depletion layer

C

low resistance

D

none of the above

When a transistor is connected in common emitter mode, it with have

A

Negligible input resistance and high output resistance

B

High input resistance and low output resistance

C

Medium input resistance and high output resistance

D

Low input resistance as well as output resistance

The emitter of a transistor is ___________ doped

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