Bissoy.com
Doctors Medicines MCQs Q&A

Related Questions

Consider the following statements (a) BJT is a current controlled device with high input impedance and high gain band width (b) FET is a voltage- controlled device with high input impedance and low gain bandwidth (c) UJT is a negative resistance device and can be used as an oscillator (d) FET and UJT can be used for amplification Which of the above statements are correct 
When UJT is used for triggering an SCR, the wave-shape of the signal obtained from UJT circuit is
In case of the UJT firing circuit, when the UJT turns on
When a UJT is used for triggering an SCR, then the wave shape of voltage obtained from the UJT circuit will be ____________
Consider the following diodes: 1. Gunn diode 2. Schottky diode 3. Crystal diode 4. Tunnel diode Which of these can be used as detector diodes?
For a diode the transition capacitance was 15pF. The diode is replaced with another diode of same material with twice cross sectional area. Terminal voltage remains unchanged. The capacitance of new diode is __________
Find the current Ix if the voltage across the diode is 0.5V. The reverse saturation current of diode 10-11A, the cut-in voltage of diode is 0.6V. Assume that the temperature at which diode operates is 25°C. The resistance R1=2KΩ.
From the given circuit diagram, considering the diode to be a silicon semiconductor diode, what is the magnitude of diode current? (Use an appropriate model of the diode)
To turn on UJT, the forward bias on the emitter diode should be ___________ the peak point voltage.
Which of the following Semiconductor devices are heterostructure (a) HEMT (b) MODFET (c) UJT (d) GUNN diode