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For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
A transistor is used in common emitter mode as an amplifier. Then a. The base-emitter junction is forward biased b. The base-emitter junction is reverse biased  c. The input signal is connected in series with the voltage applied to the base-emitter junction  d. The input signal is connected in series with the voltage applied to bias the base-collector junction Which of the following statement is true?
When the emitter terminal of a UJT is open, the resistance between the base terminal is generally ___________.
When emitter terminal of a UJT is open then the resistance of the base terminal is:
For a narrow base PNP BJT, the excess minority carrier concentrations (ΔnE for emitter, ΔpB for base, ΔnC for collector) normalized to equilibrium minority carrier concentrations (nE0 for emitter, pB0 for base, nC0 for collector) in the quasi-neutral emitter, base and collector regions are shown below. Which one of the following biasing modes is the transistor operating in?
Choose the right option among the alternatives – A transistor conducts in its forward direction when its collector/emitter/base, is positive with respect to its collector/emitter/base, and when a turn-on voltage or current signal is applied to its collector/emitter/base.
Saurabh went in his car to his coaching centre. He drove 30 m towards North and then turned to his left and moves 40 m. He then turned to left and covered 80 m. Further he turned to his left and moved 50 m. Finally he turned left and drove 10 m and then turned left to travel 10 m. How far is he from the starting point?
Consider the following statements (a) BJT is a current controlled device with high input impedance and high gain band width (b) FET is a voltage- controlled device with high input impedance and low gain bandwidth (c) UJT is a negative resistance device and can be used as an oscillator (d) FET and UJT can be used for amplification Which of the above statements are correct 
Which of the following conditions must be satisfied for a transistor to be in saturation? 1. Its collector to base junction should be under forward bias 2. Its collector to base junction should be under reverse bias 3. Its emitter to base junction should be under reverse bias 4. Its emitter to base junction should be under forward bias Which of the above conditions are correct?
Study the following information carefully and answer the question based on it. I was facing west. I turned right and walked 7 km, then turned left and walked 12 km. I again turned right and walked 5 km. After walking 5 km, I again turned right and 12 km. How much is the total distance travelled?