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Silicon devices can be employed for a higher temperature limit (190°C to 200°C) as compared to germanium devices (85°C to 100°C). With respect to this, which of the following are incorrect? 1) Higher resistivity of silicon 2) Higher gap energy of silicon 3) Lower intrinsic concentration of silicon 4) Use of silicon devices in high-power applications Select the correct answer using the code given below:
Which of the following tests are microhardness tests? P. Brinell Hardness Q. Rockwell Hardness R. Knoop Hardness S. Vickers Hardness
Silicon carbides resist oxidation up to ______
Silicon carbides resist oxidation up to
A sample of water when tested for hardness, gave total hardness value of 450 mg/l, and alkalinity value of 150 mg/l (on CaCO3 scale) respectively. The carbonate and noncarbonate hardness of the sample (in mg/l units) are respectively:
For the same long diagonal length of indenter of Vickers hardness and Knoop hardness, the Knoop hardness is how much percentage of the Vickers indenter?
An SCR is made of silicon and not germanium because silicon
Silicon percentage in silicon steel used for electrical equipments is about
Silicon percentage in the silicon steel used for electrical appliances/equipments is
A certain semiconductor A is made by doping Aluminium to Silicon and another semiconductor B is made by doping Arsenic to Silicon. The conductivities of A and B will be