Related Questions

The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor
A One hundredth
B One tenth
C One thousandth
D One millionth
The ratio of reverse resistance and forward resistance of a germanium crystal diode is about ___________
A 1 : 1
B 100 : 1
C 1000 : 1
D 40000 : 1
For germanium the forbidden energy gap is
A 0.15 eV
B 0.25 eV
C 0.5eV
D 0.7eV
For germanium transistor amplifier, VCE should ___________ for faithful amplification
A Be zero
B Be 0.2 V
C Not fall below 0.7 V
D None of the above
The barrier voltage at a pn junction for germanium is about
A 5.0 V
B 3.0 V
C Zero
D 0.3 V
Silicon percentage in silicon steel used for electrical equipments is about
A 1
B 4.0
C 8
D 14
Silicon percentage in the silicon steel used for electrical appliances/equipments is
A 0.3-0.4
B 12-14
C 3-4
D 20-25
An SCR is made of ___________
A Germanium
B Silicon
C Carbon
D None of the above
Silicon is not suitable for fabrication of light emitting diodes because it is
A An indirect band gap semiconductor
B Direct band gap semiconductor
C Wideband gap semiconductor
D Narrowband gap semiconductor
When SCR starts conducting, then ___________ loses all control
A Gate
B Cathode
C Anode
D None of the above

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