Bissoy.com
Doctors Medicines MCQs Q&A

Related Questions

If a + b + c + d = 4, then find the value of $$\frac{1}{{\left( {1 - a} \right)\left( {1 - b} \right)\left( {1 - c} \right)}}$$     + $$\frac{1}{{\left( {1 - b} \right)\left( {1 - c} \right)\left( {1 - d} \right)}}$$     + $$\frac{1}{{\left( {1 - c} \right)\left( {1 - d} \right)\left( {1 - a} \right)}}$$     + $$\frac{1}{{\left( {1 - d} \right)\left( {1 - a} \right)\left( {1 - b} \right)}}$$     is?
If a + b + c + d = 4, then the value of $$\frac{1}{{\left( {1 - a} \right)\left( {1 - b} \right)\left( {1 - c} \right)}}$$     + $$\frac{1}{{\left( {1 - b} \right)\left( {1 - c} \right)\left( {1 - d} \right)}}$$     + $$\frac{1}{{\left( {1 - c} \right)\left( {1 - d} \right)\left( {1 - a} \right)}}$$     + $$\frac{1}{{\left( {1 - d} \right)\left( {1 - a} \right)\left( {1 - b} \right)}}$$     is?
Which of the following statements is correct regarding the oxidation number of Oxygen? I. The oxidation number of Oxygen in most compounds is -2. II. When Oxygen is bonded to Fluorine in compounds like Oxygen difluoride and Dioxygen diflouride, the Oxygen is assigned an oxidation number of +2 and +2 respectively. III. In peroxide, an Oxygen atom is assigned an oxidation number of -1 and in Superoxide, each oxygen atom is assigned an oxidation number of -1/2.
Silicon devices can be employed for a higher temperature limit (190°C to 200°C) as compared to germanium devices (85°C to 100°C). With respect to this, which of the following are incorrect? 1) Higher resistivity of silicon 2) Higher gap energy of silicon 3) Lower intrinsic concentration of silicon 4) Use of silicon devices in high-power applications Select the correct answer using the code given below:
The value of the expression $$\frac{{{{\left( {a - b} \right)}^2}}}{{\left( {b - c} \right)\left( {c - a} \right)}} + $$   $$\frac{{{{\left( {b - c} \right)}^2}}}{{\left( {a - b} \right)\left( {c - a} \right)}} + $$    $$\frac{{{{\left( {c - a} \right)}^2}}}{{\left( {a - b} \right)\left( {b - c} \right)}}$$   = ?
The Hamiltonian of a particle is given by $$H = \frac{{{p^2}}}{{2m}} + V\left( {\left| {\overrightarrow {\bf{r}} } \right|} \right) + \phi \left( { + \left| {\overrightarrow {\bf{r}} } \right|} \right)\overrightarrow {\bf{L}} .\overrightarrow {\bf{S}} ,$$        where $$\overrightarrow {\bf{S}} $$ is the spin, $$V\left( {\left| {\overrightarrow {\bf{r}} } \right|} \right)$$  and $$\phi \left( {\left| {\overrightarrow {\bf{r}} } \right|} \right)$$  are potential functions and $$\overrightarrow {\bf{L}} \left( { = \overrightarrow {\bf{r}} \times \overrightarrow {\bf{p}} } \right)$$   is the angular momentum. The Hamiltonian does not commute with
$$\frac{{{{\left( {4.53 - 3.07} \right)}^2}}}{{\left( {3.07 - 2.15} \right)\left( {2.15 - 4.53} \right)}} + \, $$     $$\frac{{{{\left( {3.07 - 2.15} \right)}^2}}}{{\left( {2.15 - 4.53} \right)\left( {4.53 - 3.07} \right)}} + \,\, $$     $$\frac{{{{\left( {2.15 - 4.53} \right)}^2}}}{{\left( {4.53 - 3.07} \right)\left( {3.07 - 2.15} \right)}}$$     is simplified to :
Electronic holes in metal-assisted etching of porous silicon oxidise silicon atoms.
All the forms of matter except gases emit electromagnetic radiation continuously. The gases which electrically or thermally excited emit a certain wavelength only, then which of the following is/are true about the process (i) The spacing between the atoms in the other forms of matter is high than in gas (ii) The spacing between the atoms in gases is high than the other forms of matter (iii) The energy of the emitted radiation depends on the spacing between the atoms (iv) The wavelength of the emitted radiation depends on the spacing between the atoms 
A collection of N atoms is exposed to a strong resonant electromagnetic radiation with Ng atoms in the ground state and N atoms in the excited state, such that Ng + Ne = N. This collection of two-level atoms will have the following population distribution