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Hetero junction bipolar transistors have the same working principle and operation as that of a BJT.

Hetero junction bipolar transistors have the same working principle and operation as that of a BJT. Correct Answer false

The operation of hetero junction BJT is same as that of BJT, but an HBT has a base emitter junction made from a compound semiconductor material such as GaAs in junction with thin layers of other materials.

Related Questions

A, B, C, D, K, L, M and O are researchers and are working in three different institutes, X, Y and Z. They are working in three different areas namely, solar energy, sustainable development, and rainwater harvesting for agricultural purpose. Not less than two or more than three researchers are working in the same area and not more than three of them are working the same institute. K is researching in the sustainable development in the institute Y with B who is doing research in rainwater harvesting. A and M are doing research in the same area but not in sustainable development and are not working in the institute Y. C is researching in solar energy in the institute Z, only with D who is working in sustainable development. L is researching in rainwater harvesting area and not working in the institute where A works. O is not doing research in the solar energy. Choose option for answering question, In which of the institute/institutes at least one researcher is working in the area of solar energy ?
Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT
BJTs are bipolar junction transistors. The name bipolar is given because:
When both the junctions of bipolar junction transistor (BJT) are in forward biased, then in which region BJT will operate?
Consider the following statements regarding an N-P-N Bipolar Junction Transistor: 1. Emitter diode is forward biased and the collector diode is reverse biased 2. Emitter has many free electrons 3. Free electrons are injected into the base and pass through the collector 4. Depletion layers around junction J1 and J2 of BJT are widened. Which of the above statements are correct?
In a BJT, if the collector-base junction is reverse-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?
In a BJT, if the collector-base junction is forward-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?
In a BJT, if the collector-base junction and the base-emitter junction are both reverse-biased, which region is the BJT operating in?
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For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?