Heterojunction BJT MCQ

Test your knowledge with important Heterojunction BJT MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Heterojunction BJT MCQs at Bissoy

• The S21 parameter of a HJT increases with increase in the operating frequency of the transistor.
  ক

  true

  খ

  false
• Advantage of HJT over BJT is that it has:
  ক

  higher gain

  খ

  high frequency of operation

  গ

  sophisticated construction

  ঘ

  none of the mentioned
• Hetero junction bipolar transistors have the same working principle and operation as that of a BJT.
  ক

  true

  খ

  false
• If a transistor has a short circuit current gain of 25 and the capacitance measured in the hybrid-π model of the transistor was 60 pF. Then the threshold frequency of operation of the transistor is:
  ক

  60 MHz

  খ

  45.6 GHz

  গ

  66.3 GHz

  ঘ

  34.8 GHz
• The current gain of a BJT ________ with frequency.
  ক

  increases

  খ

  decreases

  গ

  remains constant

  ঘ

  none of the mentioned
• The output collector to emitter current of a BJT amplifier is independent of the input base current of the amplifier.
  ক

  true

  খ

  false
• Short circuit current gain of BJT is given by the expression:
  ক

  gm/ωC

  খ

  ωC/ gm

  গ

  gm/C

  ঘ

  none of the mentioned
• If a common emitter configuration BJT is treated as a two port network, the gain of the amplifier is roughly given by the S parameter:
  ক

  S11

  খ

  S12

  গ

  S21

  ঘ

  S22
• If the S11 and S22 parameters of a common emitter operated BJT is high:
  ক

  then the output and input ports are matched well

  খ

  there is mismatch in the ports

  গ

  the gain of the amplifier is high

  ঘ

  none of the mentioned
• The hybrid-π model of a BJT is useful for analysis at all frequency ranges and variation of other transistor parameters.
  ক

  true

  খ

  false
• with the increase in the operating frequency of a BJT, the S22 parameter of the transistor:
  ক

  increases

  খ

  decreases

  গ

  remains constant

  ঘ

  none of the mentioned
• In the hybrid –π model of a BJT, the capacitance Cc between the base and collector in the hybrid –π model is ignored.
  ক

  true

  খ

  false
• The upper frequency limit of BJT depends on the:
  ক

  collector length in the transistor

  খ

  base length

  গ

  emitter length

  ঘ

  driving voltage
• Bipolar junction transistor is a ________ driven device.
  ক

  current

  খ

  voltage

  গ

  power

  ঘ

  none of the mentioned
• One major disadvantage of BJTs over FETs is that:
  ক

  they have low gain

  খ

  they do not have a good noise figure

  গ

  low bandwidth

  ঘ

  none of the mentioned
• At frequency range of about 2-4 GHz, BJTs are preferred over FETs.
  ক

  true

  খ

  false
• Silicon junction transistors are used as amplifiers at frequency range of about:
  ক

  5-10 MHz

  খ

  2-10 GHz

  গ

  40-50 MHz

  ঘ

  12-45 GHz
• Bipolar junction transistors have _______ 1/f characteristics hence making them suitable for oscillators.
  ক

  high

  খ

  low

  গ

  constant

  ঘ

  decreasing exponential
• BJTs are suitable for RF applications because:
  ক

  good performance in terms of frequency

  খ

  power capacity

  গ

  noise characteristics

  ঘ

  all of the mentioned
• BJTs are bipolar junction transistors. The name bipolar is given because:
  ক

  they are made of n type and p type semiconductor

  খ

  they have holes as charge carriers

  গ

  they have electrons as charge carriers

  ঘ

  none of the mentioned