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For a pseudo nMOS design the impedance of pull up and pull down ratio is
Pseudo-nMOS has higher pull-up resistance than nMOS device.
In the following figure, the transmitter Tx sends a wideband modulated RF signal via a coaxial cable to the receiver Rx. The output impedance ZT of Tx, the characteristic impedance Z0 of the cable, and the input impedance ZR of Rx are all real. Which one of the following statements is TRUE about the distortion of the received signal due to impedance mismatch?
After conjugate impedance matching the input impedance used for matching after normalization was 1+j with the characteristic impedance of the transmission line being 100Ω, then the generator impedance must have been:
Consider an NMOS transistor having kn= 2 mA/V2. Let the transistor be biased at VOV = 1V. For operation in saturation, what dc bias current ID results? If a +0.1-V signal is superimposed on VGS, find the corresponding increment in collector current by evaluating the total collector current ID and subtracting the dc bias current ID.
The power dissipation in Pseudo-nMOS is reduced to about ________ compared to nMOS device.
A pull-up or pull-down resistor ___________
In which of the below-mentioned logic families, the transistors operate between cut-off and active (non-saturation) states? (i) Transistor-Transistor Logic (TTL) (ii) Schottky TTL (iii) Diode Transistor Logic (DTL) (iv) Emitter Coupled Logic (ECL) Choose the correct answer from the code given below: Code:
The characteristic impedance of the transmission line if the outer diameter and inner diameter of the transmission line is 20 mm and 10 mm respectively, given the intrinsic impedance of the medium is 377 Ω, then the characteristic impedance of the transmission line is:
For a lossy transmission line, γ=0.02+j0.15 and is 20m long. The line is terminated with an impedance of a 400Ω. Then the input impedance of the transmission line given that the characteristic impedance of the transmission line is 156.13+j11.38Ω is: