Storage Elements-1 MCQ

Test your knowledge with important Storage Elements-1 MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Storage Elements-1 MCQs at Bissoy

• Current flows only when
  ক

  RD is low

  খ

  RD is high

  গ

  RD raises exponentially high

  ঘ

  RD comes exponentially down
• A bit can be stored when
  ক

  RD is low, WR is low

  খ

  RD is high, WR is low

  গ

  RD is low, WR is high

  ঘ

  RD is high, WR is high
• A bit is read at T1 when
  ক

  RD is low, WR is low

  খ

  RD is high, WR is low

  গ

  RD is low, WR is high

  ঘ

  RD is high, WR is high
• Data storage time is
  ক

  1 milli second

  খ

  1 second

  গ

  1 minute

  ঘ

  10 seconds
• The impedance of pull down transistor in nMOS can be given as
  ক

  2Rs

  খ

  4Rs

  গ

  1/2 Rs

  ঘ

  1/4 Rs
• In which design, dissipation is less?
  ক

  nMOS

  খ

  pMOS

  গ

  CMOS

  ঘ

  BiCMOS
• Which occupies lesser area?
  ক

  nMOS

  খ

  pMOS

  গ

  CMOS

  ঘ

  BiCMOS
• Factor for assessment of storage elements are
  ক

  volatility

  খ

  non volatility

  গ

  number of bits

  ঘ

  data repeatability
• Data is read
  ক

  before Φ1

  খ

  after Φ1

  গ

  before Φ2

  ঘ

  after Φ2
• Clock signal Φ2 is to
  ক

  write data

  খ

  read data

  গ

  refresh data

  ঘ

  store data
• Which clock is preferred in storage devices?
  ক

  single phase overlapping clock signal

  খ

  single phase non overlapping clock signal

  গ

  two phase overlapping clock signal

  ঘ

  two phase non overlapping clock signal