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Consider the growth of a microorganism in batch culture. When the substrate concentration is high, the cell density doubles every 0.75 h, the observed substrate yield coefficient is 0.3 g DCW/g, and substrate consumption is allocated towards biosynthesis (60%), maintenance (10%), as well as product formation (30%). The product formation is strictly growth-associated. The batch reactor is inoculated with 0.01 g DCW/L and 10 g/L substrate. Estimate the maximum cell density (after lag phase).
In CMOS fabrication, nMOS and pMOS are integrated in same substrate.
In a 3-input CMOS NAND gate, the substrate terminals of NMOS transistors are grounded (lowest potential available in the circuit) and the substrate terminals of PMOS transistors are connected to VDD (maximum positive potential available in the circuit). Which of the following transistors may suffer in this circuit from the body bias effect?
A distributor sells TVs at 20% profit per piece. He introduced a new scheme that buyer can buy TVs in bulk and will get (n / 10)% off in the total purchase amount (Where n is the number of pieces in the bulk order). In March he sold 100 TVs in one bulk order and the others were single piece order. If he got an overall profit of 10% in March, how many single piece orders were there in March?
The power dissipation in Pseudo-nMOS is reduced to about ________ compared to nMOS device.
Pseudo-nMOS has higher pull-up resistance than nMOS device.
For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and |VA| (p-channel devices) = 12L (μm). Find the small-signal model parameters (gm, ro and gmb) for an NMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.
nMOS fabrication process is carried out in ____________
In nMOS fabrication, etching is done using ____________
In nMOS fabrication, etching is done using . . . . . . . . .