nMOS fabrication process is carried out in ____________

Five friends went for a trip where each carried a certain number of apples with them. The number of apples carried by C was 1 less than that by D, which was 5 more than the number of apples carried by E. The total number of apples carried by A and B both was equal to the average number of apples carried by C, D and E. If D carried more apples than B and they together carried 14 apples, which of the following is a possible value of the apples carried by A?

A

9

B

11

C

17

D

6

nMOS fabrication process is carried out in . . . . . . . .

A

Thin wafer of a single crystal

B

Thin wafer of multiple crystals

C

Thick wafer of a single crystal

D

Thick wafer of multiple crystals

In nMOS fabrication, etching is done using ____________

A

plasma

B

hydrochloric acid

C

sulphuric acid

D

sodium chloride

For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and |VA| (p-channel devices) = 12L (μm). Find the small-signal model parameters (gm, ro and gmb) for an NMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.

A

gm= 0.42mA/V, ro= 160 kΩ, gmb = 0.084 mA/V

B

for an NMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V. a) gm= 0.42mA/V, ro= 160 kΩ, gmb = 0.084 mA/V [ gm= 0.21mA/V, ro= 160 kΩ, gmb= 0.042 mA/V

C

gm= 0.42mA/V, ro= 80 kΩ, gmb = 0.042 mA/V

D

gm= 0.24mA/V, ro= 80 kΩ, gmb = 0.084 mA/V

The screening of libraries us carried out by nucleic acid hybridisation and constitutes of following steps: i) Peeling of membranes carrying away bacterial cells with it ii) Cells are lysed and denaturing of DNA is being carried out iii) Hybridization with labelled DNA iv) Placing the membrane onto plate containing recombinant cells Choose the correct sequence in which the steps are carried out (starting to ending).

A

iv)-i)-ii)-iii)

B

iv)-ii)-i)-iii)

C

i)-ii)-iii)-iv)

D

iii)-ii)-i)-iv)

Which of the following fabrication process is mainly responsible for the fabrication of very high pressure boilers and nuclear reactors?

A

welding

B

sintering

C

brazing

D

pressing

The power dissipation in Pseudo-nMOS is reduced to about ________ compared to nMOS device.

A

50%

B

30%

C

60%

D

70%

Pseudo-nMOS has higher pull-up resistance than nMOS device.

A

true

B

false

In the following passage, some of the words have been left out. Read the passage carefully and select the correct answer for the given blank out of the four alternatives.
____________ so long ago, virtually everyone seemed _____________ that a sizeable majority of British voters ____________ reaffirm their faith and confidence in a united Europe. Unfortunately, what was considered to be a remote possibility has actually become a very ____________ reality. A small majority of voters ____________ to take Britain out of the European Union (EU) in the referendum held on June 23.
A small majority of voters ____________ to take Britain out

A

had opted

B

will opt

C

have opted

D

has opted

Which is the commonly used bulk substrate in nMOS fabrication?

A

silicon crystal

B

silicon-on-sapphire

C

phosphorus

D

silicon-di-oxide

nMOS fabrication process is carried out in ____________

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