The drain current of a MOSFET in saturation is given by ID=K(VGS-VP) (VGS-VP) where k is a constant. Determine the magnitude of gm.

The Transfer characteristic of the different types of MOSFETs is shown below, where ID is drain current and VGS is the Gate-Source voltage, the correct combination of MOSFET w.r.t to transfer characteristics is: Types of MOSFET (P) P – Channel Enhancement MOSFET (Q) P – Channel Depletion MOSFET (R) N – Channel Enhancement MOSFET (S) N – Channel Depletion MOSFET

A

P – 4, Q – 2, R – 1, S – 3

B

P – 3, Q – 2, R – 4, S – 1

C

P – 1, Q – 3, R – 2, S – 4

D

P – 2, Q – 4, R – 3, S - 1

An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results?

A

0.25ID

B

0.5ID

C

2ID

D

4ID

Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT

A

Both i & ii

B

Both ii & iv

C

Both i & iv

D

Only ii

Consider the following statements regarding n-channel JFET: 1. The maximum drain current IDSS occurs when gate-to-source voltage VGS = 0 V and drain-to-source voltage VDS ≥ |VP|. (VP is pinch-off voltage). 2. For gate-to-source voltage VGS less than the pinch-off level, the drain current is 0 A. 3. For all levels of VGS between 0 V and the pinch-off level, the current ID will range between IDSS and 0 A, respectively. which of the above statements are correct ?

A

1 and 2 only

B

1 and 3 only

C

1, 2 and 3

D

2 and 3 only

The following item consists of two statements, one labeled as the 'Statement (I)' and the other as 'Statement (II)'. Examine these two statements carefully and select the answers to these items using the codes given below: Statement (I): MOSFET is a field-effect transistor whose drain current is controlled by the voltage applied at the gate. Statement (II): MOSFET is an insulated gate FET. Codes:

A

Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)

B

Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)

C

Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

D

Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

E

Statement (I) is true but Statement (II) is false

F

Statement (I) is true but Statement (II) is false

G

Statement (I) is false but Statement (II) is true

H

Statement (I) is false but Statement (II) is true

For a MOSFET, the pinch-off voltage is -3V. Gate to source voltage is 20V. W/L ratio is 5. Process transconductance parameter is 40μA/V2. Find drain to source current in saturation.

A

0.10 mA

B

0.05mA

C

– 0.05mA

D

– 50A

When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage

A

decreases

B

increases

C

remains constant

D

none of the above

In the saturation region of the MOSFET the saturation current is?

A

Independent of the voltage difference between the source and the drain

B

Depends directly on the voltage difference between the source and the drain

C

Depends directly on the overdriving voltage

D

Depends directly on the voltage supplied to the gate terminal

Which of the following phrases (i),(ii), and (iii) given below each sentenceshould replace the phrase printed in boldletters to make the sentence grammaticallycorrect? Choose the best option among thefive given alternatives that reflect the correctuse of phrase in the context of the grammatically correct sentence. If thesentence is correct as it is, mark (E) i.e., "Nocorrection required" as the answer.
The government cannot realize good pricefrom certain assets but their disposalwill helped in stop the drain.
i. Help in stoppage in the drain
ii. Help stop the drain
iii. Be helping in draining

A

A. Only i

B

B. Only ii

C

C. Only iii

D

D. i and iii

Reverse collector saturation is greater than Reverse saturation current because of reverse collector saturation __________

A

Is ideal

B

Doesn’t include leakage current

C

They are same

D

Include avalanche multiplication current which is caused by the collision in collector junction

The drain current of a MOSFET in saturation is given by ID=K(VGS-VP) (VGS-VP) where k is a constant. Determine the magnitude of gm.

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