A p-channel Ge JFET has max-half channel width 5µm and channel conductivity of 2/Ωcm, if Er = 2000cm2/Vsec, What is the value of pinch off voltage?

Consider the following statements regarding n-channel JFET: 1. The maximum drain current IDSS occurs when gate-to-source voltage VGS = 0 V and drain-to-source voltage VDS ≥ |VP|. (VP is pinch-off voltage). 2. For gate-to-source voltage VGS less than the pinch-off level, the drain current is 0 A. 3. For all levels of VGS between 0 V and the pinch-off level, the current ID will range between IDSS and 0 A, respectively. which of the above statements are correct ?

A

1 and 2 only

B

1 and 3 only

C

1, 2 and 3

D

2 and 3 only

Consider the following statements regarding JFET: 1. The relationship between the drain current and gate-to-source voltage of a JFET is a nonlinear. 2. The minimum current for JFET occurs at pinch-off voltage defined by VGS = VP. 3. A current controlled device is one in which a current defines the operating conditions of the device. Which of the above statements are correct?

A

1 and 2 only

B

1 and 3 only

C

1, 2 and 3

D

2 and 3 only

When an N-channel JFET reaches pinch-off, the increase in the drain to source voltage results in shifting of the pinch-off position towards the ___________

A

Gate

B

Drain

C

Source

D

Does not shift

The pinch off voltage of JFET is 5v. What is its cut off voltage?

A

2.5V

B

3V

C

4V

D

5V

Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.

A

Both A and R are true and R is correct explanation of A

B

Both A and R are true but R is not a correct explanation of A

C

A is true but R is false

D

A is false but R is true

Assertion (A): A JFET can be used as a current source.
Reason (R): In beyond pinch off region the current in JFET is nearly constant.

A

Both A and R are true and R is correct explanation of A

B

Both A and R are true but R is not a correct explanation of A

C

A is true but R is false

D

A is false but R is true

The n-channel JFET, the pinch off voltage is ______________

A

not greater than 0

B

greater than or equal to 0

C

less than or equal to 0

D

not less than 0

The pinch-off voltage in a JFET is analogous to ___________ voltage in a vacuum tube

A

anode

B

cathode

C

grid cut off

D

none of the above

In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers

A

almost touch each other

B

have large gap

C

have moderate gap

D

none of the above

A n-channel silicon (dielectric constant = 12) FET with a channel width a = 2 × 10⁶ m is doped with 10²¹ electron/m³. The pinch-off voltage is

A

0.86 V

B

0.68 V

C

8.6 V

D

6.8 V

A p-channel Ge JFET has max-half channel width 5µm and channel conductivity of 2/Ωcm, if Er = 2000cm2/Vsec, What is the value of pinch off voltage?

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